CM200DY-34A_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM200DY-34A APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TAB #110 t=0.5187418718 21.5 242525 6 61517.5 ʢʣ ʢʣʢʣ ʢʣ 48 ʢʣ ʢʣ ʢʣ ʢʣ ʢʣ ±0.25 108 93±0.25 4 14 14 14 2.8 +1.0 –0.5 CIRCUIT DIAGRAM C2E1 E2 C1 LABEL 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 8.5 7.5 22.2 C2E1 E2 E2 G2G1 E1

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE = ±15V RG = 2.4Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance I C = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1700 ±20 200 400 200 400 1980 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE V V A A W Vrms N • m g 2.0 2.8 49.4 5.6 1.06 550 190 750 350 450 3.0 0.063 0.11 mA µA nF nC ns µC V K/W Ω 2.2 2.45 1330 0.02 2.4 7.0 V V 5.5 8.5 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, T C = 109°C*1 (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) T C = 25°C*1 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Thermal resistance

Feb. 2009 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES 100 150 200 250 300 350 400 04 6 8 1 0 Tj = 25°C VGE = 20V 048 1 2 1 6 2 0 VCE = 10V 100 150 200 250 300 350 400 Tj = 25°C Tj = 125°C 0 100 200 300 400 VGE = 15V Tj = 25°C Tj = 125°C 4 8 12 16 20 Tj = 25°C IC = 400A IC = 200A IC = 80A 101 0.5 1 1.5 2 2.5 3 3.5 4 102 103 Tj = 25°C Tj = 125°C 10–110–1 100 101 102 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Coes Cies Cres OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (nF)

Feb. 2009 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load 102 103 101 101 10257 10323 5 723 td(off) td(on) tf tr Conditions: VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load 101 102 103 104 100 10157 10223 5 723 td(off) td(on) tf tr 100 101 102 103 101 10257 10323 5 723 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load Err Eon Eoff 103 102 101 Conditions: V CC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load Eoff Err Eon 100 10157 10223 5 723 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 25°C Inductive load 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 IGBT part: Per unit base = Rth(j–c) = 0.063K/W FWDi part: Per unit base = R th(j–c) = 0.11K/W Single Pulse Tc= 25°C Tc measured point is just under the chips HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME td(on), tr, td(off), tf (ns) COLLECTOR CURRENT IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) SWITCHING TIME td(on), tr, td(off), tf (ns) GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) COLLECTOR CURRENT IC (A) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IC (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s)

Feb. 2009 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE 0 500 1000 1500 2000 VCC = 1000V VCC = 800V IC = 200A GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC)