CM200DY-34A MITSUBISHI | Alldatasheet
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General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Jun. 2007 TAB #110 t=0.5187418718 21.5 242525 6 61517.5 ʢʣ ʢʣʢʣ ʢʣ 48 ʢʣ ʢʣ ʢʣ ʢʣʢʣ ±0.25 108 93±0.25 4 14 14 14 2.8 +1.0 –0.5 CIRCUIT DIAGRAM C2E1 E2 C1 LABEL 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 8.5 7.5 22.2 C2E1 E2 E2 G2G1 E1
Jun. 2007 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 200A, VGE = 15V VCC = 1000V, IC = 200A VGE1 = VGE2 = 15V RG = 2.4Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to fin, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance I C = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1700 ±20 200 400 200 400 1980 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE V V A A W V N • m g 2.0 2.8 49.4 5.6 1.06 550 190 750 350 450 3.0 0.063 0.11 mA µA nF nC ns µC V °C/W Ω 2.2 2.45 1330 0.02 2.4 7.0 V V 5.5 8.5 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Tc, Tf measured point is just under the chips. *2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, T C = 109°C*1 (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) T C = 25°C*1 Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Thermal resistance
Jun. 2007 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES 100 150 200 250 300 350 400 04 6 8 1 0 Tj = 25°C VGE = 20V 048 1 2 1 6 2 0 VCE = 10V 100 150 200 250 300 350 400 Tj = 25°C Tj = 125°C 0 100 200 300 400 VGE = 15V Tj = 25°C Tj = 125°C 4 8 12 16 20 Tj = 25°C IC = 400A IC = 200A IC = 80A 101 0.5 1 1.5 2 2.5 3 3.5 4 102 103 Tj = 25°C Tj = 125°C 10–110–1 100 101 102 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Coes Cies Cres OUTPUT CHARACTERISTICS COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CAPACITANCE–VCE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE VCE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) TRANSFER CHARACTERISTICS COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (nF)
Jun. 2007 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load 102 103 101 101 10257 10323 5 723 td(off) td(on) tf tr Conditions: VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load 101 102 103 104 100 10157 10223 5 723 td(off) td(on) tf tr 100 101 102 103 101 10257 10323 5 723 Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 125°C Inductive load Err Eon Eoff 103 102 101 Conditions: VCC = 1000V VGE = ±15V IC = 200A Tj = 125°C Inductive load Eoff Err Eon 100 10157 10223 5 723 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 2.4Ω Tj = 25°C Inductive load 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 IGBT part: Per unit base = Rth(j–c) = 0.063°C/W FWDi part: Per unit base = R th(j–c) = 0.11°C/W Single Pulse Tc= 25°C Tc measured point is just under the chips HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT SWITCHING TIME td(on), tr, td(off), tf (ns) COLLECTOR CURRENT IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE SWITCHING TIME td(on), tr, td(off), tf (ns) GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. COLLECTOR CURRENT SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) COLLECTOR CURRENT IC (A) SWITCHING LOSS vs. GATE RESISTANCE SWITCHING LOSS Eon, Eoff, Err (mJ/pulse) GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE EMITTER CURRENT IC (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s)
Jun. 2007 MITSUBISHI IGBT MODULES CM200DY-34A HIGH POWER SWITCHING USE 0 500 1000 1500 2000 VCC = 1000V VCC = 800V IC = 200A GATE CHARGE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC)