CM200DY-24NF MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Mar.2003 C2E1 E2 C1 LABEL TAB #110 t=0.5 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 18718718 21.5 242525 6 615 8.522.2 30 62 48±0.25 108 93±0.25 4 14 14 14 +0.1 –0.5 C2E1 E2 E2 G2G1 E1 CIRCUIT DIAGRAM Tc measured point (Base plate) CM200DY-24NF APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Mar.2003 VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6Ω, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied *2 (1/2 module) Tc measured point is just under the chips IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 200 400 200 400 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE V V A A A A W V N • m N • m g 0.5 2.5 0.9 500 150 600 350 250 3.2 0.11 0.19 0.066*3 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω 1.8 2.0 1350 7.5 0.04 1.6 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC’ = 112°C*3 Pulse (Note 2) Pulse (Note 2) TC = 25°C Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Mar.2003 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 400 300 350 100 250 200 150 004 6 8 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C VGE = 20V 00 100 400 200 250 300 350150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 0 2012 146 8 10 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 400A IC = 80A IC = 200A 101 102 103 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C Tj = 125°C 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 100 101 102 103 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) Conditions: V CC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load td(off) td(on) tf tr

Mar.2003 MITSUBISHI IGBT MODULES CM200DY-24NF HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TMIE (s) IGBT part: Per unit base = R th(j– c) = 0.11°C/W FWDi part: Per unit base = R th(j– c) = 0.19°C/W 0 800 400 1600 20001200 600200 1400 18001000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 200A