CM200DX-24A MITSUBISHI | Alldatasheet
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Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡Dual ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4-φ5.5 MOUNTING HOLES ˎ18.8 ˎ15 ˎ45.48 ˎ41.66 (102.25) ˎ95 ˎ72.14 ˎ68.34 (7.75) 3.5 TERMINAL t = 0.8 (7.4) 1.2 (3.81) 1.15 0.65 SECTION A 1.5 12.5 φ2.5 φ4.3 φ2.1 22(14) (14) (4.2) (13.5) (13.5) ˎ58.4 6 6 121.7 110 ±0.5 50 ±0.5 57.5 94.5 137 152 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 212019181716151413121110987654321 6.5 A (21.14) 4-M6 NUTS(5.4) 12.5 (SCREWING DEPTH) 17+1 -0.5 (3) 0.8 (20.5) LABEL Di1 Di2 NTC Th Tr2 Tr1 TH1(1) E1(16) C1(22)G1(15) TH2(2) E2(39) G2(38) E2(47) E1C2 (24) E1C2 (23)C1(48) ˎPin positions with tolerance φ0.5 CIRCUIT DIAGRAM 5PMFSBODFPUIFSXJTFTQFDJGJFE Division of Dimension 0.5 to 3 over 3 to 6 over 6 to 30 over 30 to 120 over 120 to 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2
Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) INVERTER PART Symbol Parameter Conditions Rating Unit VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Tj Tstg Viso Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight G-E Short C-E Short DC, T C = 90°C Pulse T C = 25°C TC = 25°C Pulse Terminals to base plate, f = 60Hz, AC 1 minute On the centerilne X, Y Main terminals M6 screw Mounting M5 screw (Typical) 1200 ±20 200 400 1250 200 400 –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 V A W A Vrms μm N·m g (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) (Note. 8) Note. 8: The base plate flatness measurement points are in the following figure. )FBUTJOLTJEF )FBUTJOLTJEF ɿDPOWFY –ɿDPODBWF
Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART Limits UnitMin. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) VEC(Note.3) Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Module lead resistance Thermal resistance (Junction to case) Contact thermal resistance (Case to heat sink) Internal gate resistance External gate resistance V CE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V, RG = 1.6Ω Inductive load (IE = 200A) IE = 200A, VGE = 0V IE = 200A, VGE = 0V Main terminals-chip, per switch per IGBT per free wheeling diode Thermal grease applied per 1 module T C = 25°C, per switch 2.0 2.2 1.9 1000 2.6 2.16 2.5 1.6 0.015 0.5 2.6 3.0 0.68 130 100 450 600 150 3.4 0.10 0.19 1.6 mA V μA V nF nC ns μC V mΩ K/W Ω T j = 25°C Tj = 125°C Chip (Note. 6) (Note. 2) (Note. 1) (Note. 1) (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) Symbol Parameter Conditions Note.1: Case temperature (T C), heat sink temperature (T f) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 4: Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed Tjmax rating. 5: Junction temperature (T j) should not increase beyond 150 °C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V CE(sat) and VEC) NTC THERMISTOR PART Limits UnitMin. Typ. Max. R ΔR/R B (25/50) P25 Zero power resistance Deviation of resistance B constant Power dissipation T C = 25°C TC = 100°C, R100 = 493Ω Approximate by equation T C = 25°C 5.00 3375 5.15 +7.8 4.85 –7.3 kΩ K mW (Note. 7) Symbol Parameter ConditionsR25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] R50 T25 T50
Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE Chip Location (Top view) Dimensions in mm (tolerance: ±1mm) (121.7) (152) (110) 16.2 36.5 37.1 41.5 38.9 76.6 (50) (62) LABEL SIDE 26.2 39.7
27.9 Di1
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 21 20 19 18 17 16 15 14 13 12 11 109 8 7 6 5 4 3 2 1 Tr2 Each mark points the center position of each chip. Tr*: IGBT, Di*: FWDi, Th: NTC thermistor
Jan. 2009 MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE trr, Qrr test waveform t IE trr Irr 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms VCC+ IC VCE IEArm RG –VGE +VGE –VGE Load 0V VGE VGE IC td(on) td(off) tr tf 90% 10% 90% VCE(sat) test circuit Tr1T r2 ICVGE = 15V E1C2 VGE = 0V E1(E1s) C1(C1s) E2(E2s) V ICVGE = 15V E1C2 VGE = 0V E1(E1s) E2(E2s) C1(C1s) V IEVGE = 0V E1C2 VGE = 0V E1(E1s) C1(C1s) E2(E2s) V IEVGE = 0V E1C2 VGE = 0V E1(E1s) E2(E2s) C1(C1s) V Di2 VEC test circuit Di1
Jan. 2009 PERFORMANCE CURVES 400 100 200 300 100 246813579 Tj = 25°CVGE = 20V 3.5 1.5 2.5 0.5 00 100 200 300 400 Tj = 25°C Tj = 125°C VGE = 15V 206 8 10 12 14 16 18 Tj = 25°C IC = 400A IC = 200A IC = 80A 102 101 04 0.5 1 1.5 2 2.5 3 3.5 103 Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V 101 10223 5 7 10323 5 7 101 100 102 103 100 10–1 101 102 td(off) td(on) tf tr Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part Cies Coes Cres COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part CAPACITANCE (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part EMITTER-COLLECTOR VOLTAGE VEC (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)EMITTER CURRENT IE (A)SWITCHING TIME (ns) MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE
Jan. 2009 100 100 10157 10223 5 723 Conditions: VCC = 600V VGE = ±15V IC, IE = 200A Tj = 125°C Inductive load 100 10157 10223 5 723 Eoff Eon Err 101 100 102 103 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 101 10257 10323 5 723 Irr trr 101 100 102 103 Conditions: VCC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load 102 101 100 Conditions: V CC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 102 101 100 101 10257 10323 5 723 Eoff Eon Err td(off) td(on) tr tf 0 200 400 600 800 1000 1200 14000 VCC = 400V VCC = 600V IC = 200A 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 Single pulse, TC = 25°C Inverter IGBT part : Per unit base = R th(j–c) = 0.10K/W Inverter FWDi part : Per unit base = R th(j–c) = 0.19K/W HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) lrr (A), trr (ns) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) TIME (s) MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE