CM200DU

CM200DU-24NFH_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM200DU-24NFH APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8.85 (8.25) (18) CIRCUIT DIAGRAM C2E1 E2 C1 G2 E2E1 G1 0.5 0.5 25.7 0.5 0.5 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 6 15 6 (7) 17.5 14 14 14 25 2.521.525 TC measured point (7.5)(7.5)

Feb. 2009 Gate-emitter threshold voltage Thermal resistance*1 Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) I C = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 200 400 200 400 830 1300 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE V V A A A A W W Vrms N • m N • m g 0.7 6.5 2.7 0.6 300 500 150 250 3.5 0.15 0.24 0.095 0.14*3 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W K/W Ω 5.0 5.0 900 7.5 0.04 1.6 V 4.5 7.5 ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. No short circuit capability is designed. G-E Short C-E Short Operation (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) T C = 25°C TC’ = 25°C*4 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 0 51 0 1 52 0 VCE = 10V 05 0 100 150 200 350 400250 300 Tj = 25°C Tj = 125°C VGE = 15V 100 150 200 250 300 350 400 02468 1 0 0 100 150 200 250 300 350 400 VGE=20 (V) Tj = 25°C 61 0 1 4 1 881 2 1 6 2 0 Tj = 25°C IC = 400A IC = 200A IC = 80A 101 102 012 4 35 103 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103

7 Tj = 25°C

td(off) td(on) tf tr 0 200 400 600 800 1000 1200 1400 VCC = 600V VCC = 400VIC = 200A Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load Conditions: V CC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j–c) = 0.15K/W 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j–c) = 0.24K/W 101 102 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)