CM200DU-24F

CM200DU-24F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 Tc measured point E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 (8.25) (18) 15.85 0.5 0.5 0.5 0.5 14 14 14 25 2.521.525 RTC RTC CIRCUIT DIAGRAM C2E1 E2 C1 G2 E2E1 G1 CM200DU-24F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 200 400 200 400 830 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE V V W Vrms N • m N • m g A A 2.4 3.4 2.0 300 500 300 200 3.2 0.15 0.18 0.091* mA µA nF nC µC V K/W Ω 1.8 1.9 2200 12.2 0.04 1.6 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES VGE = 20V Tj = 25°C 9.5 8.5 400 200 100 250 300 350 150 00 0.5 1 1.5 2 2.5 3 3.5 4 2.5 1.5 0.5 00 200100 400300 Tj = 25°C Tj = 125°C VGE = 15V 101 102 103 0.5 1 1.5 2 2.5 3 3.5 Tj = 25°C 0 2068 1 2 1610 14 18 IC = 400A IC = 200A IC = 80A Tj = 25°C 10–110–1 100 101 102 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 101 10257 10323 5 7 101 102 103 100 Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load td(off) td(on)tf tr OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr 0 500 1500 2500 30001000 2000 VCC = 400V VCC = 600V IC = 200A 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.15K/W FWDi part: Per unit base = R th(j–c) = 0.18K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)