CM200DU-12NFH_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM200DU-12NFH APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C2E1 E2 C1 G2 E2E1 G1 CM G1E1 E2 G2 C2E1 C1E2 16 162.5 21.2 7.5 2.525 17 23 11 441 8 23 4 12 13.5 80 ±0.25 2–φ6.5 MOUNTING HOLES 3–M5NUTS 12mm deep TAB #110. t=0.5 –0.5 LABEL CIRCUIT DIAGRAM TC measured point

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 6.3Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 200 400 200 400 590 830 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE V V A A A A W W Vrms N • m N • m g 0.5 2.7 3.6 2.0 250 150 500 150 150 2.6 0.21 0.35 0.15 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω 2.0 1.95 1240 3.5 0.07 3.1 V ns ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. No short circuit capability is designed. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short Operation Pulse (Note 2) Operation Pulse (Note 2) T C = 25°C TC’ = 25°C*4 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Gate-emitter threshold voltage Thermal resistance*1 Collector cutoff current Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance T j = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 400 350 300 100 250 200 150 002 3 4 5 Tj = 25°C VGE = 20V 7.5 8.5 13 11 10 9.5 0.5 1.5 2.5 0 50 100 150 200 250 300 350 400 VGE = 15V Tj = 25°C Tj = 125°C 4.5 3.5 2.5 1.5 0.5 0 2012 1468 1 0 16 18 Tj = 25°C IC = 80A IC = 400A IC = 200A 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 Cies Coes Cres VGE = 0V 101 103 102 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load td(off) td(on) tf tr 101 102 103 0 0.5 1 1.5 2 2.5 3 Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 300V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C VCC = 300V IC = 200A 200 800 1400 18001000 400 600 1200 1600 Per unit base = Rth(j–c) = 0.21K/W Per unit base = R th(j–c) = 0.35K/W VCC = 200V