CM200DU-12H

CM200DU-12H MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters A 3.7 94.0 C 1.89 48.0 D 0.94 24.0 E 0.28 7.0 F 0.67 17.0 G 0.91 23.0 H 0.91 23.0 J 0.43 11.0 K 0.71 18.0 L 0.16 4.0 Dimensions Inches Millimeters M 0.47 12.0 N 0.53 13.5 O 0.1 2.5 P 0.63 16.0 Q 0.98 25.0 S 0.3 7.5 T 0.83 21.2 U 0.16 4.0 V 0.51 13.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching applica- tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a re- verse-connected super-fast recov- ery free-wheel diode. All compo- nents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12H is a 600V (V CES ), 200 Ampere Dual IGBT Module. Current Rating V CES Type Amperes Volts (x 50) CM 200 12 Outline Drawing and Circuit Diagram MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE G1 E1 G2 G2 C2E1 A GF CM V 2 - Mounting Holes (6.5 Dia.) E U H E2 C1C2E1 C 3-M5 Nuts D B J K L NM P PQ OO TC Measured Point R S T TAB#110 t=0.5

Sep.1998 MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200DU-12H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 600 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 200 Amperes Peak Collector Current I CM 400* Amperes Emitter Current (Tc = 25°C) I E 200 Amperes Peak Emitter Current I EM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P c 650 Watts Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m Mounting Torque, M6 Mounting – 3.5~4.5 N · m Weight – 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Voltage I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 20mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge Q G VCC = 300V, IC = 200A, VGE = 15V – 400 – nC Emitter-Collector Voltage V EC IE = 200A, VGE = 0V – – 2.6 Volts Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 17.6 nF Output Capacitance C oes VCE = 10V, VGE = 0V – – 9.6 nF Reverse Transfer Capacitance C res – – 2.6 nF Resistive Turn-on Delay Time t d(on) VCC = 300V, IC = 200A, – – 150 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 400 ns Switch Turn-off Delay Time t d(off) R G = 3.1Ω , Resistive – – 300 ns Times Fall Time t f Load Switching Operation – – 300 ns Diode Reverse Recovery Time t rr IE = 200A, diE/dt = -400A/µs – – 160 ns Diode Reverse Recovery Charge Q rr IE = 200A, diE/dt = -400A/µs – 0.48 – µC Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/2 Module – – 0.19 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/2 Module – – 0.35 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W

Sep.1998 MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 240 VGE = 20V Tj = 25oC 160 320 400 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 320 240 160 400 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 80 160 240 320 400 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 Tj = 25°C IC = 80A IC = 400A IC = 200A 101 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 103 102 101 10-1 100 VGE = 0V 101 C oes C res C ies COLLECTOR CURRENT, I C , (AMPERES) 104 101 102 103 103 102 101 td(off) td(on) tr VCC = 300V VGE = ±15V R G = 3.1 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 101 102 103 102 101 trr Irr di/dt = -400A/µsec Tj = 25°C 102 100 10-1 REVERSE RECOVERY CURRENT, I rr, (AMPERES) 103 101 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 100 300 200 500400 600 VCC = 300V VCC = 200V IC = 200A

Sep.1998 MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3