CM100DU-12F

CM100DU-12F MITSUBISHI | Alldatasheet

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Sep.2000 RTC RTC CIRCUIT DIAGRAM C2E1 E2 C1 G2E2E1 G1 CM G1E1 E2 G2 C2E1 C1E2 16 162.5 21.2 7.5 2.525 17 23 11441 8 23 4 12 13.5 80 –0.25 2–φ6.5 MOUNTING HOLES 3–M5NUTS 12mm deep TAB #110. t=0.5 –0.5 LABEL Tc measured point CM100DU-12F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE \ Insulated Type \ 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Sep.2000 VCE = VCES , VGE = 0V VGE = VCES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V , IC = 100A, VGE = 15V VCC = 300V , IC = 100A VGE1 = VGE2 = 15V RG = 6.3W , Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied *2 (1/2 module) Tc measured point is just under the chips IC = 10mA, VCE = 10V IC = 100A, VGE = 15V VCE = 10V VGE = 0V 600 –20 100 200 100 200 350 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE V V A A A A W V N • m N • m g 2.2 1.8 100 300 250 150 2.6 0.35 0.70 0.28 mA mA nF nF nF nC ns ns ns ns mC V °C/W °C/W °C/W °C/W W 1.6 1.6 620 1.9 0.07 6.3 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance T otal gate charge T urn-on delay time T urn-on rise time T urn-off delay time T urn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R G Symbol Parameter Test conditions VGE(th) VCE(sat) Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short T C = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) T C = 25°C Charged part to base plate, AC 1 min. Main T erminal M5 Mounting holes M6 T ypical value Symbol Parameter Collector current Emitter current T orque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTy p. Limits Min. Max. Note 1. IE, VEC , trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES 120 160 200 00 0.5 1 1.5 2 2.5 3 3.5 4 7.5 100 101 102 103 0 0.5 1 1.5 2 2.5 3 3.5 4 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 2.5 1.5 0.5 0 160 2000 40 80 120 06 8 10 12 14 16 18 20 0 10123 5 7 10223 5 7 10323 5 7 100 101 102 103 Tj=25°C VGE =20V 9.5 8.5

8 Tj = 25°C

Tj = 125°C VGE = 15V IC = 200A IC = 100A IC = 40A Tj = 25°C VGE = 0V C res C oes C ies VCC = 300V VGE = –15V R G = 6.3W Tj = 125°C Conditions: td(off) td(on) tf tr Tj = 25°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT I C (A)

Sep.2000 MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE 100 10123 5 7 10223 5 7 100 101 102 trr Irr 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 0 100 300 500 700 900 Single Pulse TC = 25°C IC = 100A VCC = 300V VCC = 200V Conditions: VCC = 300V VGE = –15V R G = 6.3W Tj = 25°C REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) IGBT part: Per unit base = Rth(j–c) = 0.35°C/W FWDi part: Per unit base = R th(j–c) = 0.7°C/W REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A)