CM100DC-24NFM MITSUBISHI | Alldatasheet
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APPLICATION NOTE MITSUBISHI<IGBT MODULE> TENTATIVE TSM-1860 1 - 3 TENTATIVE CM100DC-24NFM Pre. S.Kawabata,H.Takemoto,M.Hiyoshi Apr. Y.Nagashima 1-Dec-'06 Rev HIGH POWER SWITCHING USE Notice: This is not a final specification. Some parametric limits are subject to change. CM100DC-24NFM I Insulated Type 2-elements in a pack Caution: No short circuit capability is designed. APPLICATION High frequency switching use & Resonant inverter power supply, etc ABSOLUTE MAXIMUM RATINGS (T j=25°C, unless otherwise specified) Symbol Item Conditions Ratings Units VCES Collector-emitter voltage G-E Short 1200 V VGES Gate-emitter voltage C-E Short ± 20 V IC Operation 100 ICM Collector current Pulse *4 200 A IE *3 Operation 100 IEM *3 Emitter current Pulse *4 200 A PC *5 Maximum collector dissipation T C=25°C *1 670 W Tj Junction temperature - 40 ~ +150 °C Tstg Storage temperature - 40 ~ +125 °C Viso Isolation voltage Main terminal to base plate, AC 1 min. 2500 V - Torque strength Main terminal M6 3.5 ~ 4.5 N･m - Torque strength Mounting holes M6 3.5 ~ 4.5 N･m - Weight Typical value 375 g
APPLICATION NOTE MITSUBISHI<IGBT MODULE> TENTATIVE TSM-1860 2 - 3 CM100DC-24NFM HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (T j=25°C, unless otherwise specified) Symbol Item Conditions Min. Typ. Max. Units ICES Collector cutoff current V CE=VCES, V GE=0V - - 1 mA VGE(th) Gate-emitter threshold voltage IC=10mA, V CE=10V 4.5 6.0 7.5 V IGES Gate leakage current ±V GE=VGES, V CE=0V - - 0.5 μA IC=100A *6 T j=25°C - 3.0 4.5 VCE(sat) Collector to emitter saturationvoltage VGE=15V T j=125°C - 3.0 - V Cies Input capacitance - - 16 Coes Output capacitance V GE=0V, V CE=10V *6 - - 1.3 nF Cres Reverse transfer capacitance - - 0.3 QG Total gate charge V CC=600V, IC=100A, VGE=15V - 450 - nC td(on) Turn-on delay time V CC=600V, I C=100A - - 100 tr Turn-on rise time V GE1=VGE2=15V, R G=3.1Ω - - 50 td(off) Turn-off delay time Inductive load - - 250 tf Turn-off fall time switching operation - 60 200 trr *3 Reverse recovery time I E=100A - 70 120 ns Qrr *3 Reverse recovery charge - 6 － μC VEC *3 Emitter-collector voltage I E=100A, V GE=0V - 2.0 3.0 V Rth(j-c)Q IGBT part (1/2 module) *1 - - 0.186 Rth(j-c)R Thermal resistance FWDi part (1/2 module) *1 - - 0.28 Rth(c-f) Contact thermal resistance Case to fin, Thermal grease applied (1/2module) *1 *2 - 0.02 - °C/W RG External gate resistance 3.1 - 31 Ω *1: T C, T f measured point is just under the chips. *2: Typical value is measured by usi ng Shin-Etsu Chemical Co.,Ltd "G-747". *3: I E, I EM, V EC, t rr & Q rr represent characteristics of the anti-par allel, emitter to collector free-wheel diode (FWDi). *4: Pulse width and repetition rate should be su ch that the device junction temperature (T j) dose not exceed Tjmax rating. *5: Junction temperature (T j) should not increase beyond 150°C. *6: Pulse width and repetition rate should be su ch as to cause neglible temperature rise.
APPLICATION NOTE MITSUBISHI<IGBT MODULE> TENTATIVE TSM-1860 3 - 3 CM100DC-24NFM HIGH POWER SWITCHING USE O U T L I N E D R A W I N G D i m e n s i o n s i n m m CIRCUIT DIAGRAM C1 E2 C2E1 G1 E1 E2 G2