CM100BU-12H

CM100BU-12H MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters A 2.83 72.0 B 2.17 ±0.01 55 ±0.25 C 3.58 91.0 E 0.43 11.0 F 0.79 20.0 G 0.69 17.5 H 0.75 19.1 J 0.39 10.0 K 0.41 10.5 L 0.05 1.25 Dimensions Inches Millimeters M 0.74 18.7 N 0.02 0.5 P 1.55 39.3 Q 0.63 16.0 R 0.57 14.4 S 0.22 Dia. 5.5 Dia. T 0.32 8.1 U 1.02 26.0 V 0.59 15.0 W 0.20 5.0 X 1.61 41.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching applica- tions. Each module consists of four IGBTs in an H-Bridge configura- tion, with each transistor having a reverse-connected super-fast re- covery free-wheel diode. All com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100BU-12H is a 600V (V CES ), 100 Ampere Four- IGBT Module. Current Rating V CES Type Amperes Volts (x 50) CM 100 12 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram EE HR GuN EuN GvN EvN GuP U V EuP GvP EvP GF P B D J C M L L S(4 - Mounting Holes) 4 - M4 NUTS TAB#110 t=0.5 Q J N K GF EH VWV U X T A GuP EuP GuN EuN U P N GvP EvP GvN EvN V TC Measured Point TC Measured Point

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM100BU-12H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 600 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 100 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 200* Amperes Emitter Current (Tc = 25°C) I E 100 Amperes Peak Emitter Current I EM 200* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 400 Watts Mounting Torque, M4 Main Terminal – 1.3 ~ 1.7 N · m Mounting Torque, M5 Mounting – 2.5 ~ 3.5 N · m Weight – 390 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1 mA Gate Leakage Voltage I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 10mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 100A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 100A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge Q G VCC = 300V, IC = 100A, VGE = 15V – 200 – nC Emitter-Collector Voltage* V EC IE = 100A, VGE = 0V – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 8.8 nF Output Capacitance C oes VCE = 10V, VGE = 0V – – 4.8 nF Reverse Transfer Capacitance C res – – 1.3 nF Resistive Turn-on Delay Time t d(on) VCC = 300V, IC = 100A, – – 100 ns Load Rise Time t r VGE1 = VGE2 = 15V, – – 250 ns Switch Turn-off Delay Time t d(off) R G = 6.3Ω , Resistive – – 200 ns Times Fall Time t f Load Switching Operation – – 300 ns Diode Reverse Recovery Time t rr IE = 100A, diE/dt = -200A/µs – – 160 ns Diode Reverse Recovery Charge Q rr IE = 100A, diE/dt = -200A/µs – 0.24 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c)Q Per IGBT 1/4 Module – – 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c)D Per FWDi 1/4 Module – – 0.7 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.025 – °C/W MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 200 100 150 25050 300 VCC = 300V VCC = 200V IC = 100A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -200 A/µsec Tj = 25°C 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) 103 100 101 102 102 101 td(off) td(on) tr VCC = 300V VGE = ±15V R G = 6.3 Ω Tj = 125°C tf SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE(TYPICAL) 10-1 100 102 101 100 10-1 10-2 VGE = 0V 101 C ies C oes C res 101 102 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 Tj = 25°C IC = 40A IC = 200A IC = 100A COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 50 100 150 200 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 160 120 200 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 120 VGE = 20V Tj = 25oC 160 200

Sep.1998 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W Zth = R th
• (NORMALIZED VALUE)