CM1000HA-28H MITSUBISHI | Alldatasheet

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Sep.1998 DE E C E G H K R AB B A NF L M C J G P Q C U - M4 THD (2 TYP.) S - M8 THD (2 TYP.) T - DIA. (4 TYP.) E G E Dimensions Inches Millimeters A 5.12 130.0 B 4.33 ±0.01 110.0 ±0.25 C 1.840 46.75 F 1.42 36.0 G 1.25 31.8 H 1.18 30.0 J 1.10 28.0 K 1.08 27.5 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura- tion with a reverse-connected su- per-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-28H is a 1400V CES ), 1000 Ampere Single IGBT Module. Type Current Rating V CES Amperes Volts (x 50) CM 1000 28 Dimensions Inches Millimeters L 0.79 20.0 M 0.77 19.5 N 0.75 19.0 P 0.61 15.6 Q 0.51 13.0 R 0.35 9.0 S M8 Metric M8 T 0.26 Dia. Dia. 6.5 U M4 Metric M4 Outline Drawing and Circuit Diagram MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-12H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1400 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 1000 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 2000* Amperes Emitter Current (Tc = 25°C) I E 1000 Amperes Peak Emitter Current I EM 2000* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 5800 Watts Mounting Torque, M8 Main Terminal – 8.83~10.8 N · m Mounting Torque, M6 Mounting – 1.96~2.94 N · m Mounting Torque, M4 Terminal – 0.98~1.47 N · m Weight – 1600 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 2.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 100mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 1000A, VGE = 15V – 3.3 4.5 Volts IC = 1000A, VGE = 15V, Tj = 150°C – 3.1 – Volts Total Gate Charge Q G VCC = 800V, IC = 1000A, VGE = 15V – 5355 – nC Emitter-Collector Voltage V EC IE = 10000A, VGE = 0V – – 4.0 Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 200 nF Output Capacitance C oes VGE = 0V, VCE = 10V – – 70 nF Reverse Transfer Capacitance C res –– 4 0 n F Resistive Turn-on Delay Time t d(on) – – 800 ns Load Rise Time t r VCC = 800V, IC = 1000A, – – 2000 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1200 ns Times Fall Time t f – – 650 ns Diode Reverse Recovery Time t rr IE = 1000A, diE/dt = –2000A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 1000A, diE/dt = –2000A/µs – 10.5 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.050 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 VCE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 2000 02468 1 0 1600 1200 800 400 Tj = 25°C VGE = 20V VGE , (VOLTS) IC , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 2000 0 4 8 12 16 20 1600 1200 800 400 VCE = 10V Tj = 25°C Tj = 125°C VGE , (VOLTS) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 IC = 2000A IC = 1000A IC = 400A VEC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) IE, (AMPERES) Tj = 25°C COLLECTOR CURRENT I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 101 103102 104 102 103 101 tr td(off) VCC = 800V VGE = –15V R G = 3.3Ω Tj = 125°C td(on) tf VCE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 102 101 100 101 VGE = 0V C res C oes C ies EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 103102 104 102 101 Irr trr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -2000A/µsec Tj = 25°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 2000 4000 6000 10000 VCC = 800V VCC = 600V IC = 1000A Tj = 25°C 8000 1.0 1.5 4.0 101 104 103 3.0 3.52.52.0 102 IC , (AMPERES) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 800 1200 2000 VGE = 15V Tj = 25°C Tj = 125°C 1600 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.022°C/W Zth = R th

  • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.05 °C/W Zth = R th
  • (NORMALIZED VALUE) 10-1 10-2 10-3 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE