CM1000E4C-66R | DigiCamel IC Datasheet

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CM1000E4C-66R MITSUBISHI | Alldatasheet

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Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE

1-element in a Pack (for brake chopper)
Insulated Type
LPT-IGBT / Soft Recovery Diode
AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000E4C-66R OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM >PET+PBT< >PET+PBT< +0.1 –0.2+1 SCREWING DEPTH MIN 16.5SCREWING DEPTH MIN 7.7 (K) (A) (E)(E) (C)(C) E G C LABEL C EG 2038 3-M4 NUTS 8-φ7 MOUNTING HOLES 6-M8 NUTS190±0.5 29.5±0.5 15±0.3 40±0.3 9±0.2 20.25±0.3 41.25±0.3 13±0.379.4±0.3 61.5±0.3 61.5±0.3 140±0.5 124±0.25 5.2±0.3 5±0.2 28±0.5 40±0.3 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules VGE = 0V, Tj = –40…+150 °C VGE = 0V, Tj = –50°C VCE = 0V, Tj = 25°C DC, Tc = 95°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC VCC =2500V, VCE ≤ VCES, VGE =15V, Tj =150°C 3300 3200 ± 20 1000 3000 1000 3000 10400 6000 2600 –50 ~ +150 –50 ~ +150 –55 ~ +150 MAXIMUM RATINGS Symbol Conditions Unit Ratings V V A A A A W V V µs VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation(Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

ELECTRICAL CHARACTERISTICS

Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-on switching energy (Note 6) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Turn-off switching energy (Note 6) Emitter-collector voltage (Note 2) Max 4.0 6.7 0.5 3.70 1.25 1.25 0.50 0.50 3.30 3.30 1.00 1.00 2.80 VCE = VCES, VGE = 0V IC = 1000 A (Note 4) VGE = 15 V VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4Ω Ls = 150 nH Inductive load VCC = 1800 V IC = 1000 A VGE = ±15 V RG(off) = 8.4Ω Ls = 150 nH Inductive load IE = 1000 A (Note 4) VGE = 0 V Min 5.7 –0.5 Typ 4.0 24.0 6.2 140.0 8.7 4.0 10.7 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 1.65 1.95 2.10 1.80 2.20 2.40 2.70 2.80 2.85 0.30 0.35 0.40 1.35 1.65 1.70 1.50 1.80 1.90 2.15 2.30 2.25 Item Conditions Limits Unit mA V µA nF nF nF µC V µs µs J/P J/P µs µs J/P J/P V VCE = 10 V, IC = 100 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 1800 V, IC = 1000 A, VGE = ±15 V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Symbol ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) Eon td(off) tf Eoff(10%) Eoff VEC (Note 1) (Note 1)

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, λgrease = 1W/m·K ,D(c-f) = 100 µm K/kW K/kW K/kW K/kW Min Typ Max 12.0 22.5 22.5 7.0 THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min Typ Max MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit ELECTRICAL CHARACTERISTICS (continuation) Reverse recovery time (Note 2) Reverse recovery current (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2)(Note 5) Reverse recovery energy (Note 2)(Note 6) Max VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4 Ω Ls = 150 nH Inductive load Min Typ 0.50 0.70 0.80 850 1000 1050 700 1150 1350 0.70 1.20 1.35 0.80 1.35 1.55 Item Conditions Limits Unit µs A µC J/P J/P Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Symbol trr Irr Qrr Erec(10%) Erec Note 1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed T opmax rating (150 °C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake choppe r, anode to cathode clamp diode (Clamp-Di). 3. Junction temperature (T j) should not exceed T jmax rating (150 °C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. The integration range of E on / Eoff / Erec according to IEC 60747. Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance Contact thermal resistance Mt Ms Mt m CTI da ds LP CE RCC’+EE’ rg M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Collector to Emitter Anode to Cathode Tc = 25°C, Collector to Emitter Tc = 25°C, Anode to Cathode Tc = 25°C N·m N·m N·m kg mm mm nH nH mΩ mΩ Ω Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Internal gate resistor 22.0 6.0 3.0 1.2 22.0 33.0 0.24 0.36 2.25 7.0 3.0 1.0 600 19.5 32.0

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES COLLECTOR CURRENT (A) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE (V) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) 1600 2000 1200 800 400 0 34105 6 0012345 1600 2000 1200 800 400 1600 2000 1200 800 400 0012345 1600 2000 1200 800 400 2 6821 0 1 24 Tj = 25°C Tj = 150°C VGE = 15V VCE = VGE Tj = 150°C VGE = 9V VGE = 11V VGE = 19V VGE = 15V VGE = 13V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 00 400 800 1200 1600 2000 00 400 800 1200 1600 2000 102 103 101 100 10010-1 23 5 7 101 10223 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) -15 -10 128401 6 VCE = 1800V, IC = 1000A Tj = 25°C Eon Eoff Erec Eoff Cies Coes Cres VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω LS = 150nH, Tj = 125°C Inductive load VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω LS = 150nH, Tj = 150°C Inductive loadEon VGE = 0V, Tj = 25°C f = 100kHz Erec

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 102 101 10-2 103102 423 5 7423 5 7 104 100 10-1 COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 101 10-2 103102 423 5 7423 5 7 104 100 10-1 05 1 0 15 20 GATE RESISTOR (Ω) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 05 1 0 15 20 GATE RESISTOR (Ω) SWITCHING ENERGIES (J/P) VCC = 1800V, IC = 1000A VGE = ±15V, LS = 150nH Tj = 125°C, Inductive load td(off) td(on) tf tr Eon Eoff Erec VCC = 1800V, IC = 1000A VGE = ±15V, LS = 150nH Tj = 150°C, Inductive load Eon Eoff Erec VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω LS = 150nH, Tj = 125°C Inductive load td(off) td(on) tf tr VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω LS = 150nH, Tj = 150°C Inductive load

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ZRth( j –c ) ( t ) = Σ n i=I i 1–exp ti – t    Ri [K/kW] : τi [sec] : 0.0096 0.0001 0.1893 0.0058 0.4044 0.0602 0.3967 0.3512 103102 423 5 7423 5 7 104 EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) 103 104 102 101 101 102 100 10-1 103102 423 5 7423 5 7 104 EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) 103 104 102 101 101 102 100 10-1 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 0.8 0.6 0.4 0.2 VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, LS = 150nH Tj = 125°C, Inductive load lrr trr VCC = 1800V, VGE = ±15V RG(on) = 2.4Ω, LS = 150nH Tj = 150°C, Inductive load lrr trr Rth(j–c)Q = 12.0K/kW Rth(j–c)R = 22.5K/kW

Notice: This is not a final specification. Some parametric limits are subject to change. Mar. 2009 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 4000 3000 1000 2000 0 1000 20000 3000 4000 4000 3000 1000 2000 0 1000 20000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (kA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 0 1000 20000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 2500V, di/dt < 6kA/µs Tj = 150°C VCC ≤ 2500V, VGE = ±15V RG(on) = 2.4Ω, RG(off) = 8.4Ω Tj = 150°C VCC ≤ 2500V, VGE = ±15V Tj = 150°C, RG(off) = 8.4Ω

Product Information

CM1000E4C-66R specifications and overview.

Summary

HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

Description

HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

Source title CM1000E4C-66R Datasheet(PDF) - Mitsubishi Electric Semiconductor

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