CM1000DU-34NF MITSUBISHI | Alldatasheet
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APPLICATION NOTE MITSUBISHI<IGBT MODULE> Prelimina CM1000DU-34NF lApr. [M.Yamamoto Dec.14 ‘o1] [| 7. Amumt> 20-aee-63 | HIGH POWER SWITCHING USE | Notice : This is not a final specification. Some parametric limits are subject to change. ICM1000DU-34NF @Insulated Type @2-elements in a pack APPLICATION General purpose inverters & Servo controls,etc ABSOLUTE MAXIMUM RATINGS (T, = 25 °C) . [Symbol[ tem Conditions Ratings Units _] Collector-emitter voltage G-E Short CE Short fic Gollestor current 1000 [AB en ©| [puss TPC rT] [Sunetion temperature [| —SSSSSSSS* Cart| [Tstg_ [Storage temperature® || 04125 | LB Isolation voltage Main terminal to base plateAC 1 min. [3500 | V_ [cl | — [Torque strength Main terminal M6 [ 35~45 | Nem | | — [Torque strength Mounting holes M6 | 35~ 45 | Nem | [ [Weight ‘Typical value mo Tg |: TSM-1626-D La=3 ]
APPLICATION NOTE MITSUBISHI<IGBT MODULE> CM1000DU-34NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (T, = 25 °C) llocs | Collector cutoff current Voe=Voes:Veg= OV | - [| - [1 [m ] Gate-emitter Veeieaty Collector to emitter saturation [T= 25 °C} Io = 1000A | - | 22 | 28 | Vv (chip) voltage(without lead resistance) T= 125 °C| Vee= 15V © | - [24] - | (3) Ri(lead) [Module lead resistance Ie = 1000A, terminal-chip | - [ozs] — [mo [ABI Reverse transfer capacitance | - | - [47 | ]Q, __| Total gate charge Voo=1000V,0=1000A,Vec=15V | — | 6000 | - | xc | Bllb) Turn-on delay time Vec= 1000V,lc=1000A | — | — | 600 | td(off) _[Turn-off delay time Re=0.470Inductive load [| — | — | 900 | Turn-off fall time switching. operation | — | — | 200 | Veo Emitter-collector voltage _ IE=1000A,Vge= OV Vv | ® (without lead resistance) Rth(j-c)Q IGBT part (1/2module) | - | - [0032] ~ Thermal resistance °C/W o Rth(-o)R FWDi part (1/2module) | - | - [00s] ae Case to fin, Thermal compound Rth(c-) Contact thermal resistance? Applied (1/2module | - | 0.016 | — | <n Te measured point is just Rth(-c’)Q 1 0.014 Thermal resistance” under the chips((GBT part) "CW Rth(-c)R Tc measured point is just under the chips(FWDi part) *1: Tc’ measured point Is just under the chips. lf you use this value , Rth(f-a) should be measured just under the chips. *2: Typical value is measured by using Shin-etsu Silicone "G-746". oO ; *3: Tc measured point is shown in page “3-3”, *4: The operation temperature is restrained by the permission temperature of female connector. ® [e.Vecstrr & Qrr represent characteristics of the anti-parallel,emitter to collector free-wheel diode (FWDi). ® Pulse width and repetition rate should be such that the device junction temp.(T)) dose not exceed Tjmax rating. @ Junction temperature (T, ) should not increase beyond 150°C. @ Pulse width and repetition rate should be such as to cause neglible temperature rise. TSM-1626-D Le=3 |
APPLICATION NOTE MITSUBISHI<IGBT MODULE> CM1000DU-34NF HIGH POWER SWITCHING USE OUTLINE DRAWING Dimensions in mm AB HOUSING Type (.S.T.Mfg.Co,Ltd) A: VHR-2N | B: VHR-5N | Te measured point 150 7 Te measured point (The side of Cu base plate) \\._ B750s (The side of Cu base plate) 34.693 . je | 12,2 . 7 4 | en et | a || Alle 9 ere | ef - Ca "0 | «|= 13) 8 i A | G as a | cla Tal tals , | eat , | 8-965 it | as MOUNTING HOLES : ain : la) al fh eg (o}— | q_ \\pe allie eoy-— an | 9-M6 NUTS 12 ARPA 1.9402 || 34.635 42. & : A C2E1 CIRCUIT DIAGRAM | LI NM 7 io * GQ 8 c2 ® | 2 lai<—cr (or) of (a) | Ga c2> ig en elanl<—e1 La (=) Eo | a a | I |e) | G oon a ne ee _= | = 9) | °5 eo allie ay TSM-1626-D [33 ]