CLY5

CLY5 SIEMENS | Alldatasheet

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Siemens Aktiengesellschaft pg. 1/8 17.12.96 HL EH PD21 D a t a s h e e t *Power amplifier for mobile phones *For frequencies from 400 MHz to 2.5 GHz *Wide operating voltage range: 2.7 to 6 V * POUT at VD =3V, f=1.8GHz typ. 26.5 dBm *High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Pin Configuration 1 2 3 4 Package 1) CLY 5 CLY 5 Q62702-L90 G S D S SOT 223 Maximum ratings Symbol Values Unit Drain-source voltage V DS 9V Drain-gate voltage V DG 12 V Gate-source voltage V GS -6 V Drain current I D 1.2 A Channel temperature T Ch 150 °C Storage temperature T stg -55...+150 °C Pulse peak power P Pulse 9W Total power dissipation (Ts < 80 °C) Ts: Temperature at soldering point Ptot 2W Thermal Resistance Channel-soldering point R thChS ≤35 K/W 1) Dimensions see chapter Package Outlines

Siemens Aktiengesellschaft pg. 2/8 17.12.96 HL EH PD21 Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Symbol min typ max Unit Drain-source saturation current VDS = 3 V VGS = 0 V IDSS 600 800 1200 mA Drain-source pinch-off current VDS = 3 V VGS = -3.8 V ID - 10 100 µA Gate pinch-off current VDS = 3 V VGS = -3.8 V IG -5 2 0 µ A Pinch-off Voltage VDS = 3 V ID =100µA Small Signal Gain*) VDS = 3 V ID = 350 mA f = 1.8 GHz Pin = 0 dBm G 10.5 11.0 - dB Small Signal Gain*) VDS = 5 V ID = 350 mA f = 1.8 GHz Pin = 0 dBm G 11.5 12.0 - dB Small Signal Gain **) VDS = 3 V ID = 350 mA f = 1.8 GHz Pin = 0 dBm G p 9.0 9.5 - dB Output Power VDS = 3 V ID = 350 mA f = 1.8 GHz Pin = 19 dBm Po 26.5 27 - dBm Output Power VDS = 5 V ID = 350 mA f = 1.8 GHz Pin = 21 dBm Po 29.5 30 - dBm 1dB-Compression Point VDS = 3 V ID = 350 mA f = 1.8 GHz P1dB - 26.5 - dBm 1dB-Compression Point VDS = 5 V ID = 350 mA f = 1.8GHz P1dB - 30 - dBm Power Added Efficiency VDS = 5 V ID = 350 mA f = 1.8 GHz Pin = 21 dBm PAE 40 55 - % *) Matching conditions for maximum small signal gain (not identical with power matching conditions!) **) Power matching conditions: f=1.8GHz: Source Match: Γms : MAG 0.58; ANG -143°; Load Match: Γml : MAG 0.76; ANG -116°

Siemens Aktiengesellschaft pg. 3/8 17.12.96 HL EH PD21 Compression Power vs. Drain-Source Voltage f = 1.8GHz; IDS=0.5IDSS P1dB ηηD [dBm] 01234567 8 [%] [V] Drain-Source Voltage Gain P1dB [dB] 01234567 8 0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 [W] [V] Drain-Source Voltage Output Characteristics 0,1 0,3 0,5 0,7 0,9 0123456 Drain-Source Voltage [V] VGS = 0V VGS = -0.5V VGS = -1V VGS = -1.5V VGS = -2V PtotDC

Siemens Aktiengesellschaft pg. 4/8 17.12.96 HL EH PD21 typ. Common Source S-Parameters VDS = 3 V I D = 350 mA Z o = 50 ΩΩ f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG

Siemens Aktiengesellschaft pg. 5/8 17.12.96 HL EH PD21 typ. Common Source S-Parameters VDS = 5 V I D = 350 mA Z o = 50 ΩΩ f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Additional S-Parameter available on CD

Siemens Aktiengesellschaft pg. 6/8 17.12.96 HL EH PD21 Total Power Dissipation Ptot = f(Ts) Permissible Pulse Load Ptotmax/PtotDC = f(tp) Ptot 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 [W] 0 50 100 150 Ts C O

Siemens Aktiengesellschaft pg. 7/8 17.12.96 HL EH PD21 CLY5 Power GaAs-FET Matching Conditions Definition: ΓΓ Measured Data: Typ f [GHz] VDS [V] ID [mA] P-1dB [dBm] Gain [dB] Γms MAG Γms ANG Γml MAG Γml ANG 5 350 29.2 16.3 0.52 144 0.61 -156 6 350 29.8 17.2 0.58 143 0.54 -168 5 350 30.0 11.5 0.59 -164 0.69 -126 6 350 30.6 12.6 0.64 -165 0.55 -132 5 350 30.0 10.0 0.56 -140 0.71 -118 6 350 30.5 10.0 0.58 -133 0.69 -119 5 350 29.1 8.7 0.60 -109 0.66 -105 6 350 30.5 8.9 0.65 -112 0.68 -106 Note: Gain is small signal gain @ Γms and Γml

Siemens Aktiengesellschaft pg. 8/8 17.12.96 HL EH PD21 Increased Power Handling Capability Pulsed Applications 577µs 4,615ms GSM/PCN TDMA-Frame: Take value P P tot tot max DC from diagram permissible pulse load --> P P 1.4 tot tot max DC Take value P P tot tot max DC from diagram permissible pulse load --> P P 1.5 tot tot max DC D = t T ms 4.615ms p == 0 577 0125. . P = 2W 1.4 = 2.8Wtot × 417µs 10ms DEC T TDM A-Frame: D = t T ms 4.615ms p == 10 0 0417. P = 2W 1.5 = 3Wtot ×