CHM21A2PAPT CHENMKO | Alldatasheet

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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 20 Ampere APPLICATION FEATURE * Super high dense cell design for extremely low R DS(ON) . CONSTRUCTION * N-Channel Enhancement * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. 2006-02 * High power and current handing capability. Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter CHM21A2PAPT Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Maximum Drain Current - Continuous A - Pulsed PD Maximum Power Dissipation at Tc = 25 38 W TSTG Storage Temperature Range -55 to 150 °C Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 50 °C/W (Note 3) Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% * Small package. (TO-252A) TJ Operating Temperature Range -55 to 150 °C 3. Repetitive Rating , Pulse width linited by maximum junction temperature (Note 1) 4. Guaranteed by design , not subject to production trsting CIRCUIT S D G(1) (2) (3) TO-252A TO-252ADimensions in inches and (millimeters) .220 (5.59) .195 (4.95) .417 (10.6) .346 (8.80)

1 Gate

3 Drain( Heat Sink )

2 Source

.28 0 (7.10) .238 (6.05) .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59 ) .078 (1.98) .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) .024 (0.61) .016 (0.40) (3) (2)(1)

RATING CHARACTERISTIC CURVES ( CHM21A2PAPT ) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS ON CHARACTERISTICS gFS Forward Transconductance VDS =10V, ID = 8A RDS(ON) Static Drain-Source On-Resistance SWITCHING CHARACTERISTICS Qgs Gate-Source Charge Qgd Gate-Drain Charge ton Turn-On Time nS VDD = 10V ID = 1A, VGS = 4.5 V tr Rise Time 30 BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA nA 20 V nA I GSSF DSS S Zero Gate Voltage Drain Current I VDS Gate-Body Leakage Gate-Body Leakage 20 V, V V GS GS 12V, = 0 V VDS µ = 0 V A +100 -100VGS = -12V, VDS = 0 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 V 100 tf Fall Time 25 Qg Total Gate Charge 2.8 VDS=10V, ID=8A VGS=4.5V Turn-Off Timetoff RGEN= 6 Ω (Note 2) (Note 4) 1.5 S nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 4A, VGS = 0 V 1.3 A V (Note 1) (Note 2) 3.6 I GSSR mΩ VGS=4.5V, ID=8A VGS=2.5V, ID=6.6A 55 70