CFY77 SIEMENS | Alldatasheet
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Features
*Very low noise *Very high gain *For low noise front end amplifiers up to 20 GHz *For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package 1) CFY77-08 HG Q62702-F1549 MW-4 CFY77-10 HH Q62702-F1559 MW-4 Maximum ratings Symbol Unit Drain-source voltage VDS 3.5 V Drain-gate voltage VDG 4.5 V Gate-source voltage VGS -3.0 V Drain current ID 60 mA Channel temperature TCh 150 °C Storage temperature range Tstg -65...+150 °C Total power dissipation (TS < 51°C) 2) Ptot 180 mW Thermal resistance Channel-soldering point source R thChS 550 K/W 1) Dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point
AlGaAs / InGaAs HEMT CFY 77 Siemens Aktiengesellschaft pg. 2/4 11.01.1996 HL EH PD 21 Electrical characteristics at TA = 25°C unless otherwise specified Characteristics Symbol min typ max Unit Drain-source saturation current VDS = 2 V V GS = 0 V IDSS 15 30 60 mA Pinch-off voltage VDS = 2 V ID = 1 mA Gate leakage current VDS = 2 V ID = 15 mA IG - 0.05 2 µA Transconductance VDS = 2 V ID = 15 mA gm 50 65 - mS Noise figure VDS = 2 V ID = 15 mA f = 12 GHz CFY77-08 CFY77-10 F 0.7 0.9 0.8 dB Associated gain VDS = 2 V ID = 15 mA f = 12 GHz CFY77-08 CFY77-10 G a 9.5 10.5 dB
AlGaAs / InGaAs HEMT CFY 77 Siemens Aktiengesellschaft pg. 3/4 11.01.1996 HL EH PD 21 Total Power Dissipation Ptot = f (TS;TA ) Package mounted on alumina 100 120 140 160 180 200 0 50 100 150 AS totP TT; [ °C ] [ mW ] AT ST Typical Common Source Noise Parameters ID = 15 mA U DS = 2.0 V Z 0 = 50 Ω fF min G a Γopt R n rn NF 50Ω GHz dB dB MAG ANG Ω dB
AlGaAs / InGaAs HEMT CFY 77 Siemens Aktiengesellschaft pg. 4/4 11.01.1996 HL EH PD 21 Typical Common Source S-Parameters ID = 15 mA UD = 2.0 V Z0 = 50 Ω S11 S21 S12 S22 GHz Mag Ang Mag Ang Mag Ang Mag Ang