CFY30 SIEMENS | Alldatasheet
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Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HL EH PD 21 D a t a s h e e t * Low noise ( Fmin = 1.4 dB @ 4 GHz ) *High gain ( 11.5 dB typ. @ 4 GHz ) *For oscillators up to 12 GHz *For amplifiers up to 6 GHz *Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY 30 A2 Q62703-F97 S D S G SOT-143 Maximum ratings Symbol Value Unit Drain-source voltage VDS 5V Drain-gate voltage VDG 7V Gate-source voltage VGS -4 ... +0.5 V Drain current ID 80 mA Channel temperature TCh 150 °C Storage temperature range Tstg -40...+150 °C Total power dissipation (TS < 70°C) 2) Ptot 250 mW Thermal resistance Channel-soldering point 2) R thChS <320 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft pg. 2/6 11.01.1996 HL EH PD 21 Electrical characteristics at TA = 25°C, unless otherwise specified Characteristics Symbol min typ max Unit Drain-source saturation current V DS = 3.5 V, V GS = 0 V I DSS 20 50 80 mA Pinch-off voltage V DS = 3.5 V I D = 1 mA V GS(P) -0.5 -1.3 -4.0 V Transconductance V DS = 3.5 V I D = 15 mA g m 20 30 - mS Gate leakage current V DS = 3.5 V I D = 15 mA I G - 0.1 2 µA Noise figure V DS = 3.5 V I D = 15 mA f = 4 GHz f = 6 GHz F 1.4 2.0 1.6 dB Associated gain V DS = 3.5 V I D = 15 mA f = 4 GHz f = 6 GHz G a 11.5 8.9 dB Maximum available gain V DS = 3.5 V I D = 15 mA f = 6 GHz MAG - 11.2 - dB Maximum stable gain V DS = 3.5 V I D = 15 mA f = 4 GHz MSG - 14.4 - dB Power output at 1 dB compression V DS = 4 V I D = 30 mA f = 6 GHz P1d B -1 6- dBm
Siemens Aktiengesellschaft pg. 3/6 11.01.1996 HL EH PD 21 Typical Common Source Noise Parameters I D = 15 mA V DS = 3.5 V Z = 50 Ω fF min G a Γopt R n NF 50Ω G(F50 Ω ) GHz dB dB MAG ANG Ω -d B d B Total Power Dissipation Ptot = f (TS;TA ) 100 200 0 50 100 150 AS totP TT ;[ ° C ] [ m W ] AT ST 300
Siemens Aktiengesellschaft pg. 4/6 11.01.1996 HL EH PD 21 Output characteristics ID = f (VDS ) ID [mA] VDS [V] 12345 =0VVGS =-0.2VVGS =-0.4VVGS =-0.6VVGS =-0.8VGSV =-1.0VVGS =-1.2VV GS =-1.4VVGS
Siemens Aktiengesellschaft pg. 5/6 11.01.1996 HL EH PD 21 Typical Common Source S-Parameters ID = 15 mA UD = 3.5 V Z0 = 50 Ω f S11 S21 S12 S22 GHz Mag Ang Mag Ang Mag Ang Mag Ang
Siemens Aktiengesellschaft pg. 6/6 11.01.1996 HL EH PD 21 Typical Common Source S-Parameters ID = 30 mA UD = 3.5 V Z0 = 50 Ω f S11 S21 S12 S22 GHz Mag Ang Mag Ang Mag Ang Mag Ang