CFY25 SIEMENS | Alldatasheet

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ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration CFY 25-17 CFY 25-20 CFY 25-23 Q62703-F106 Q62703-F107 Q62703-F108 C 5 C 6 C 7 Micro-X 1 2 3 D S G S Parameter Symbol Values Unit Drain-source voltage VDS 5V Drain current ID 80 mA Gate-source voltage VGS – 5 … + 0 Channel temperature Tch 150 ˚C Total power dissipation,TS ≤ 56 ˚C2) Ptot 250 mW Storage temperature range Tstg – 65 … + 150 Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Drain-gate voltage VDG 7 1) For detailed information see chapter Package Outlines. 2) TS is measured on the source lead at the soldering point to the pcb.

  • Low noise
  • High gain
  • For front-end amplifiers
  • lon-implanted planar structure
  • All gold metallization 07.94

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. mADrain-source saturation current VDS = 3 V,VGS = 0 IDSS 15 30 60 mSTransconductance ID = 15 mA,VDS = 3 V gm 30 40 – VPinch-off voltage ID = 1 mA,VDS = 3 V µAGate leakage current ID = 15 mA,VDS = 3 V IG – 0.1 2 dBNoise figure IDS = 15 mA,VDS = 3 V,f= 12 GHz CFY 2 5-17 CFY 2 5-20 CFY 2 5-23 F 1.6 1.9 2.2 1.7 2.0 2.3 Associated gain I DS = 15 mA,VDS = 3 V,f= 12 GHz CFY 2 5-17 CFY 2 5-20 CFY 2 5-23 G a 8.5 8.5 9.5

Total power dissipationPtot =f (TS;TA *) * Package mounted on alumina Transfer characteristicsID =f (V G ) VDS = 3 V Output characteristicsID =f (V DS )

Source impedance for min. noise figure ID = 15 mA,VDS = 3 V Common Source Noise Parameters 0.60 0.77 1.00 1.25 1.55 1.77 2.15 18.5 14.6 12.4 11.0 9.8 9.0 8.1 103 140 174 – 156 – 130 7.3 5.6 7.1 0.10 0.14 0.19 0.23 0.28 0.29 0.46 2.0 1.8 1.8 2.0 2.4 2.5 3.0 0.70 0.59 0.50 0.47 0.45 0.43 0.41 f Γopt GHz dB dB MAG ANG Ω –d B F min G a R N NF 50 Ω ID = 15 mA,VDS = 3.0 V,Z0 = 50Ω 0.580 0.420 0.260 0.146 0.112 0.142 0.360 rN 11.4 10.5 9.3 8.2 7.3 6.4 5.8 dB G (F 50 Ω) Circles of constant noise figure ID = 15 mA,VDS = 3 V,f = 12 GHz

Minimum noise figureF min =f (f) Associated gainG a =f (f) ID = 15 mA,VDS = 3 V,ZSopt Minimum noise figureF min =f (ID ) Associated gainG a =f (ID ) VDS = 3 V,f = 12 GHz,ZSopt

Common Source S Parameters fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.99 0.96 0.91 0.86 0.81 0.77 0.74 0.70 0.68 0.67 0.67 0.66 0.66 0.66 0.66 0.66 0.66 0.66 – 21 – 42 – 67 – 87 – 107 – 125 – 145 – 165 178 161 146 132 117 103 3.83 3.73 3.55 3.34 3.10 2.92 2.74 2.57 2.42 2.31 2.20 2.10 2.02 1.94 1.90 1.84 1.80 1.78 161 141 121 103 – 4 – 17 – 31 – 44 – 57 – 70 – 84 – 99 0.026 0.049 0.069 0.083 0.093 0.100 0.105 0.107 0.108 0.109 0.110 0.110 0.110 0.112 0.115 0.119 0.125 0.132 – 9 – 17 – 24 – 30 – 36 – 42 – 49 – 55 – 63 – 72 – 83 0.68 0.66 0.63 0.59 0.56 0.52 0.48 0.45 0.42 0.41 0.39 0.37 0.36 0.35 0.34 0.33 0.32 0.31 – 13 – 27 – 41 – 55 – 66 – 77 – 89 – 102 – 112 – 124 – 134 – 145 – 158 – 169 180 165 151 136 ID = 15 mA,VDS = 3 V,Z0 = 50Ω S11,S22 ID = 15 mA,VDS = 3 V,Z0 = 50Ω S12,S21 ID = 15 mA,VDS = 3 V,Z0 = 50Ω