CFK2162-P3-000T

CFK2162-P3 MIMIX | Alldatasheet

Document overview

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Technical content

3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095

Features

o Proprietary Power FET Process o >45% Linear Power Added Efficiency o +29 dBm with 30 dBc Third Order Products o Surface Mount SO-8 Power Package

Applications

o PCS/PCN Base Stations and Terminals o Wireless Local Loop

Description

The CFK2162-P3 is a high-gain FET intended for dri- ver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques. 1.8 to 2.0 GHz +34 dBm Power GaAs FET Product Specifications July 1997 (1 of 4) 1 3 4 78 6 5 G G D D Back Plane is Source GND GND GND GND Package Diagram Notes: 1. Sum to two tones with 1 MHz spacing = 29 dBm. 2. See thermal considerations information on page 4. Max (+V d) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd + |-Vg|) not to exceed the mini- mum breakdown voltage (Vbr) of +18V . Absolute Maximum Ratings Parameter Symbol Rating Drain-Source V oltage V DS 12V (3) Gate-Source V oltage V GS -5V Drain Current I DS Idss Continuous Dissipation P T 10W Channel Temperature T CH 175°C Storage Temperature T STG -65°C to +175°C Parameters Conditions Min Typ Max Units V d = 8V , Id = 800 mA (Quiescent) P-1dB 33.0 34.0 — dBm SSG 13.0 14.0 — dB 3rd Order Products (1) 26 30 — dBc Efficiency @ P1dB — 43 — % V d = 5V , Id = 350 mA (Quiescent) P-1dB — 30.0 — dBm SSG — 11.0 — dB V d = 5V , Id = 1200 mA (Quiescent) P-1dB — 32.5 — dBm SSG — 12.0 — dB Specifications(TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 1.95 GHz. Parameters Conditions Min Typ Max Units gm Vds = 2.0V , Vgs = 0V — 1700 — mS Idss Vds = 2.0V , Vgs = 0V — 2.8 — A V p Vds = 3.0V , Ids = 65 mA — -1.8 V olts BV GD (3) Igd = 6.5 mA 18 20 — V olts Q JL (2) @150°C TCH — 10 — °C/W SO-8 Power Package Physical Dimensions

3236 Scott Boulevard, Santa Clara, California 95054

Phone: (408) 986-5060 Fax: (408) 986-5095 CFK2162-P3 Product Specifications - July 1997 (2 of 4) RF Match Data shown in the performance graphs was taken in the test circuits shown at right and on page 3. Layout is important for proper operation. Phase length of input and out- put 50Ω line varies as a function of exact desired frequency of operation. Output shunt inductor effects output perfor- mance. Celeritek recommends the use of a high impedance printed inductor Lambda/4 in length. Please contact the facto- ry for an evaluation board and/or more detailed application support. Typical Scattering Parameters (TA = 25°C, Vds = 5 V, Ids = 350 mA) Frequency S11 S21 S12 S22(GHz) Mag Ang Mag Ang Mag Ang Mag Ang (TA = 25°C, Vds = 5 V, Ids = 1200 mA) (TA = 25°C, Vds = 8 V, Ids = 800 mA) 15 pF 3.3 pF RF OUTRF IN CFK2162-P3, 5V, 350 mA 50 Ω uuuu Vguuuu 100 pF 50 Ω 0.1 µF 7.5 Ω 0.1 µF91 Ω 100 pF Vd 1.5 pF 3.9 pF 1.8 pF 3.9 pF 47 nH 100 nH

Power Output & Power Added Efficiency vs Power Input 1.95 GHz, VDS = 5 V, IDS = 1.2 A Power Input (dBm) Power Output (dBm) Efficiency (%)Efficiency Power Output -2 3 8 18 2313 Power Output & Power Added Efficiency vs Power Input

1.95 GHz, VDS = 8 V, IDS = 800 mA

Power Input (dBm) Power Output (dBm) Efficiency (%)Efficiency Power Output -3 2 7 17 2212 Frequency, GHz Power Output @ P-1 dB Gain @ P-1 dBPower Output Gain Power Output and Gain vs Frequency V DS =5V, IDS = 1200 mA Power Output & 3rd Order Products vs Power Input 1.95 GHz, VDS = 5 V, IDS = 1.2 A Power Input (dBm) Power Output (dBm) 3rd Order Products (dBc) 3rd Order Products Power Output -2 3 8 18 2313 Power Output & 3rd Order Products vs Power Input Power Input (dBm) Power Output (dBm) 3rd Order Products (dBc) 3rd Order Products Power Output -3 2 7 17 2212 Frequency, GHz Power Output and Gain vs Frequency V DS =8V, IDS = 800 mA Power Output @ P-1 dB Gain 1229 Power Output Gain @ P-1 dB CFK2162-P3 Product Specifications - July 1997 (3 of 4) Typical Performance 15 pF 3.3 pF RF OUTRF IN CFK2162-P3, 5V, 1200 mA 50 Ω uuuu Vguuuu 100 pF 50 Ω 0.1 µF 7.5 Ω 0.1 µF91 Ω 100 pF Vd 1.5 pF 3.9 pF 1.8 pF 3.3 pF 47 nH 100 nH 15 pF 3.3 pF RF OUTRF IN CFK2162-P3, 8V, 800 mA 50 Ω uuuu Vguuuu 100 pF 50 Ω 0.1 µF 7.5 Ω 0.1 µF91 Ω 100 pF Vd 1.5 pF 3.9 pF 1.8 pF 3.9 pF 47 nH 100 nH

Phone: (408) 986-5060 Fax: (408) 986-5095 CFK2162-P3 Product Specifications - July 1997 (4 of 4) Celeritek reserves the right to make changes without further notice to any products herein. Celeritek makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Celeritek assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Celeritek does not convey any license under its patent rights nor the rights of others. Celeritek products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Celeritek product could create a situation where personal injury or death may occur. Should Buyer purchase or use Celeritek products for any such unintended or unauthorized application, Buyer shall indemnify and hold Celeritek and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Celeritek was negligent regarding the design or manufacture of the part. Celeritek is a registered trademark of Celeritek, Inc. Celeritek, Inc. is an Equal Opportunity/Affirmative Action Employer.

Ordering Information

The CFK2162-P3 power stage is available in a SO-8 surface mount package. Devices are available in tape and reel. Ordering part numbers are listed. Part Number for Ordering Function Package CFK2162-P3 1.8 - 2.0 GHz PowerStage SO-8 surface mount powerpackage CFK2162-P3-000T 1.8 - 2.0 GHz PowerStage SO-8 surface mount powerpackage in tape and reel Thermal Considerations The data shown was taken on a 31 mil thick FR-4 board with 1 ounce copper on both sides. The board was mounted to a base- plate with 3 screws as shown. The screws bring the top side copper temperature to the same value as the baseplate. The thermal resistance to the indicated reference lead, Q JL, is 10°C/W . The thermal resistance to the reference screw is 12°C/W . 1. Use 1 or 2 ounce copper if possible. 2. Solder all eight leads of the CFK2162-P3 package to the appropriate electrical connection. 3. Solder the copper pad on the backside of the CFK2162-P3 package to the ground plane. 4. Use a large ground pad area with many plated through-holes as shown. 5. If possible, use at least one screw no more than 0.2 inches from the CFK2162-P3 package to provide a low thermal resistance path to the baseplate of the package.