CGH40006S CREE | Alldatasheet

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Technical content

Subject to change without notice. www.cree.com/wireless CGH40006S

6 W, RF Power GaN HEMT , Plastic

Cree’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package. Rev 3.0 – M ay 2015

FEATURES

  • Up to 6 GHz Operation
  • 13 dB Small Signal Gain at 2.0 GHz
  • 11 dB Small Signal Gain at 6.0 GHz
  • 8 W typical at PIN = 32 dBm
  • 65 % Efficiency at PIN = 32 dBm
  • 28 V Operation
  • 3mm x 3mm Package

APPLICATIONS

  • 2-Way Private Radio
  • Broadband Amplifiers
  • Cellular Infrastructure
  • Test Instrumentation
  • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Package Types: 440203 PN’s: CGH40006S

CGH40006S Rev 3.0 Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 84 Volts 25˚C Gate-to-Source Voltage VGS -10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 175 ˚C Maximum Forward Gate Current IGMAX 2.1 mA 25˚C Maximum Drain Current1 IDMAX 0.75 A 25˚C Soldering Temperature2 TS 260 ˚C Thermal Resistance, Junction to Case3,4 RθJC 10.1 ˚C/W 85˚C Case Operating Temperature3,4 TC -40, +150 ˚C Note:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at www.cree.com/RF/Document-Library 3 Measured for the CGH40006S at PDISS = 8 W. 4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal resistance. The RTH for Cree’s demonstration amplifier, CGH40006S-AMP1, with 13 (Ø20 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is Electrical Characteristics (TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 2.1 mA Gate Quiescent Voltage VGS(Q) – -2.7 – VDC VDS = 28 V, ID = 100 mA Saturated Drain Current IDS 1.7 2.1 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 2.1 mA RF Characteristics2 (TC = 25˚C, F0 = 5.8 GHz unless otherwise noted) Small Signal Gain GSS 10 11.8 – dB VDD = 28 V, IDQ = 100 mA Power Output at PIN = 30 dBm POUT 5 6.9 – W VDD = 28 V, IDQ = 100 mA Drain Efficiency3 η 40 53 – % VDD = 28 V, IDQ = 100 mA, PIN = 30 dBm Output Mismatch Stress VSWR – – 10 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 100 mA, PIN = 32 dBm Dynamic Characteristics Input Capacitance CGS – 2.7 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS – 0.8 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD – 0.1 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on wafer prior to packaging. 2 Measured in Cree’s narrow band production test fixture AD-000291. This fixture is designed for high volume test at 5.8 GHz and may not show the full capability of the device due to source inductance and thermal performance. The demonstration amplifier, CGH40006S-AMP1, is a better indicator of the true RF performance of the device.

3 Drain Efficiency = POUT / PDC

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Small Signal Gain vs Frequency at 28 V of the CGH40006S in the CGH40006S-AMP1 Input & Output Return Losses vs Frequency at

28 V of the CGH40006S in the CGH40006S-AMP1

Gain (dB) S-parameter Gain (dB) Frequency (GHz) CGH40006S - S21 -12 -10 Gain (dB) S-parameter -26 -24 -22 -20 -18 -16 -14 -12 Gain (dB) Frequency (GHz) CGH40006S - S11 CGH40006S - S22

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Power Gain vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA Drain Efficiency vs Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA Gain (dB) Gain vs. Pout

2.0 GHz

3.0 GHz

4.0 GHz

5.0 GHz

6.0 GHz

20 22 24 26 28 30 32 34 36 38 40 Gain (dB) Output Power (dBm) 40% 50% 60% 70% Drain Efficiency EFF vs output power 10% 20% 30% 20 22 24 26 28 30 32 34 36 38 40 Drain Efficiency Output Power (dBm)

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Power Gain vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA Drain Efficiency vs Input Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 100 mA Gain (dB) Gain vs input power 10 12 14 16 18 20 22 24 26 28 30 32 34 Gain (dB) Input Power (dBm) 60% 70% 80% 90% 100% Drain Efficiency Drain Efficiency vs. Pin 10% 20% 30% 40% 50% 10 12 14 16 18 20 22 24 26 28 30 32 34 Drain Efficiency Input Power (dBm)

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Power Gain vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Output Power vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V Drain Efficiency vs Frequency of the CGH40006S in the CGH40006S-AMP1 at PIN = 32 dBm, VDD = 28 V 10Gain (dB) Gain @ Pin 32 dBm Gain (dB) Frequency (GHz) Output Power (W) Power (w) @ Pin 32 dBm Output Power (W) Frequency (GHz) 40% 50% 60% 70% Drain Efficiency Drain efficiency @ Pin 32 dBm 10% 20% 30% Drain Efficiency Frequency (GHz)

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Third Order Intermodulation Distortion vs Average Output Power as a Function of Frequency of the CGH40006S in the CGH40006S-AMP1 VDD = 28 V, IDQ = 60 mA Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Moisture Sensitivity Level (MSL) Classification Parameter Symbol Level Test Methodology Moisture Sensitivity Level MSL 3 (168 hours) IPC/JEDEC J-STD-20 -20 -10 IM3 (dBc) IM3 vs Total output power -60 -50 -40 -30 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 IM3 (dBc) Output Power (dBm)

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40006S VDD = 28 V, IDQ = 100 mA Note 1. On a 20 mil thick PCB. Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006S VDD = 28 V, IDQ = 100 mA Note 1. On a 20 mil thick PCB. Minimum Noise Figure (dB) Noise Resistance (Ohms) MAG (dB) K Factor

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH40006S CW Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). Source and Load Impedances Frequency (MHz) Z Source Z Load 1000 12.7 + j20.2 62.3 + j42 2000 5.98 + j6.81 32.7 + j32.9 3000 3.32 - j2.89 19.2 + j29.8 4000 2.38 - j9.45 15.2 + j15.7 5000 2.62 - j15.6 9.98 + j9.6 6000 1.94 - j21.35 8.51 + j2.07 Note 1. VDD = 28V, IDQ = 100mA in the 440203 package. Note 2. Optimized for power gain, PSAT and PAE. Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. Note 4. 35 pH source inductance is assumed between the package and RF ground (20 mil thick PCB). D Z Source Z Load G S 0 25 50 75 100 125 150 175 200 Power Dissipation (W) Maximum Case Temperature (°C) Power Dissipation derating Curve vs max Tcase Note 1

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH40006S-AMP1 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, AIN, 0505, 470 Ohms (≤5% tolerance) 1 R2 RES, AIN, 0505, 50 Ohms (≤5% tolerance) 1 R3 RES, AIN, 0505, 360 Ohms (≤5% tolerance) 1 C1 CAP , 1.3 pF +/-0.1 pF , 0603, ATC 600S 1 C2 CAP , 2.7 pF +/-0.25 pF , 0603, ATC 600S 1 C10 CAP , 3.6 pF +/-0.1 pF , 0603, ATC 600S 1 C4,C11 CAP , 8.2 pF +/-0.25, 0603, ATC 600S 2 C6,C13 CAP , 470 pF +/-5%, 0603, 100 V 2 C7,C14 CAP , 33000 pF , CER, 100V, X7R, 0805 2 C8 CAP , 10 uf, 16V, SMT, TANTALUM 1 C15 CAP , 1.0 uF +/-10%, CER, 100V, X7R, 1210 1 C16 CAP , 33 uF, 100V, ELECT, FK, SMD 1 J3,J4 CONN, SMA, STR, PANEL, JACK, RECP 2 J1 HEADER RT>PLZ .1CEN LK 5POS 1 - PCB, RO5880, 0.020” THK 1 Q1 CGH40006S 1 CGH40006S-AMP1 Demonstration Amplifier Circuit

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. CGH40006S-AMP1 Demonstration Amplifier Circuit Schematic CGH40006S-AMP1 Demonstration Amplifier Circuit Outline

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Typical Package S-Parameters for CGH40006S (Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 To download the s-parameters in s2p format, go to the CGH40006S Product Page and click on the documentation tab. Note 2. On a 20 mil thick PCB.

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Product Dimensions CGH40006S (Package Type — 440203) Pin Input/Output

1 GND

2 RF IN

3 GND

4 GND

5 RF OUT

6 GND

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Tape & Reel Dimensions

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Product Ordering Information Order Number Description Unit of Measure CGH40006S GaN HEMT Each CFG40006S-AMP1 Test board with GaN HEMT installed Each CGH40006S-TR Delivered in Tape and Reel 250 parts / reel

CGH40006S Rev 3.0 Cree, Inc. Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing & Export Cree, RF Components 1.919.407.5302 Ryan Baker Marketing Cree, Wireless Devices 1.919.407.7816 Tom Dekker Sales Director Cree, Wireless Devices 1.919.407.5639