CF750

CF750 SIEMENS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Siemens Aktiengesellschaft pg. 1/6 12.01.96 HL EH PD 21 D a t a s h e e t * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Pin Configuration 1 2 3 4 Package 1) CF 750 MX Q62702-F1391 GND D G S SOT 143 Circuit diagram: G D S 20k 500Ω 10pF GND Maximum ratings Symbol Unit Drain-source voltage VDS 8V Gate-source voltage -VGS 5V Drain current ID 80 mA Gate-source peak current +IGSM 2m A Channel temperature TCh 150 °C Storage temperature range Tstg -55 ... +150 °C Total power dissipat. (TS<48°C) Ptot 300 mW Thermal resistance Channel-soldering point (GND) R thChGND 340 K/W 1) For detailed dimensions see chapter Package Outlines 2) TS: Temperature measured at soldering point

Siemens Aktiengesellschaft pg. 2/6 12.01.96 HL EH PD 21 Electrical characteristics TA = 25°C, unless otherwise specified DC characteristics Symbol min typ max Unit Drain-Source Breakdown Voltage ID = 500 µA, -VGS =4V VDS(BR) 8--V Drain Current VGGND = 0V, VDS = 3.8 V S-pin not connected IDSS,P 1.6 2 2.8 mA Drain Current VGS = 0V, VDS = 3.8 V S-pin connected to GND IDSS -5 0- m A Transconductance ID = 10 mA, VDS = 3.8 V S-pin connected to GND gm -2 5- m S Electrical characteristics of CF 750 in Amplifier Application TA = 25 °C, VDGND = 3.8V, RS = RL = 50 Ω, unless otherwise specified Amplifier Application Symbol min typ max Unit Power Gain ID = 2 mA, f = 900 MHz G PS -1 1-d B Noise Figure ID = 2 mA, f = 900 MHz F - 1.6 - dB 3rd Order Intermodulation ID = 2 mA, f = 900 MHz IPIP3 - -1 - dBm 3rd Order Intermodulation ID = 2 mA, f = 900 MHz OPIP3 - 10 - dBm Power Gain ID = 2 mA, f = 1.8 GHz G PS -1 0-d B Noise Figure ID = 2 mA, f = 1.8 GHz F - 1.9 - dB 3rd Order Intermodulation ID = 2 mA, f = 1.8 GHz IPIP3 - -1 - dBm 3rd Order Intermodulation ID = 2 mA, f = 1.8 GHz OPIP3 - 9 - dBm

Siemens Aktiengesellschaft pg. 3/6 12.01.96 HL EH PD 21 Electrical characteristics of CF 750 in Mixer Application TA = 25 °C, VDGND = 3.8V, RS = RL = 50 Ω, unless otherwise specified Mixer Application Symbol min typ max Unit Single Sideband Noise Figure fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm FSSB - 4.5 - dB Conversion Gain fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm G a -1 5-d B 3rd Order Intermodulation fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm IPIP3 - -5 - dBm 3rd Order Intermodulation fRF = 945 MHz, fLO = 900 MHz fIF = 45 MHz, PLO = 3 dBm OPIP3 - 10 - dBm

Siemens Aktiengesellschaft pg. 4/6 12.01.96 HL EH PD 21 Typical Common Source S-Parameters Bias conditions: VDGND = 3.8 V, ID = 2 mA Source-Pad RF-grounded by capacitor with low inductance (< 0.5nH ) ! f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG Typical Common Source Noise Parameters Bias conditions: VD = 3 V, ID = 2 mA, Z = 50Ω f Γopt ( F ) Rn Rn/50Ω F min MHz MAG ANG Ω -d B 200 0.80 5 75 1.50 1.2 450 0.79 12 60 1.20 1.2 800 0.68 23 51 1.02 1.5 900 0.63 26 49 0.98 1.6 1200 0.58 34 45 0.90 1.7 1500 0.54 42 40 0.80 1.8 1800 0.52 51 36 0.72 1.9 1900 0.50 53 35 0.70 1.9

Siemens Aktiengesellschaft pg. 5/6 12.01.96 HL EH PD 21 Output characteristics ID = f (VDGND ) at nominal operating point; S not connected. 0 1 2 3 4 5 6 7 8 VDGND [V] 0.5 1.0 1.5 2.0 ID [mA] VGGND = 0V -0.2V -0.4V -0.6V -0.8V -1.0V Output characteristics ID = f (VDS ), S connected to GND. 0 1 2 3 4 5 6 7 8 ID [mA] VGS =0V VGS =-0.2V VGS =-0.4V VGS =-0.6V VGS =-0.8V VGS =-1.0V VDS [V]

Siemens Aktiengesellschaft pg. 6/6 12.01.96 HL EH PD 21 Mixer measurement and application circuit ( No. 1) G D S GND CF 750 RF IF LO + 3.8V 1 nF 1 nF * must be high capacitance to ensure good IF grounding at source Amplifier measurement and application circuit (No. 2) G D S GND CF 750 RF + 3.8V 100 pF 100pF RF