CF739 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • N-channel dual-gate GaAs MES FET
  • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners
  • Low noise
  • High gain
  • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings 1 2 3 S D G 2 G 1 Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration CF 739 Q62702-F1215MS SOT-143 Parameter Symbol Values Unit Drain-source voltage VDS 10 V Drain current ID 80 mA Gate 2-source voltage – VG2S 6 Channel temperature Tch 150 ˚C Total power dissipation,TS ≤ 66 ˚C2) Ptot 240 mW Storage temperature range Tstg – 55 … + 150 Thermal Resistance Channel - soldering point3) RthchS ≤ 350 K/W Gate 1-source voltage – VG1S 6 Gate 1-source peak current + IG1SM 1 Gate 2-source peak current + IG2SM 1 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm× 16.7 mm× 0.7 mm. 3) TS is measured on the source lead at the soldering point to the pcb.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. VDrain-source breakdown voltage ID = 100µA, –VG1S = –VG2S = 4 V V(BR)DS 10 – – VGate 1-source pinch-off voltage VG2S = 0,VDS = 5 V,ID = 200µA – VG1S(P) – – 2.5 Gate 2-source pinch-off voltage VG1S = 0,VDS = 5 V,ID = 200µA – VG2S(P) – – 2.5 mADrain current VG1S = 0,VG2S = 0,VDS = 3 V IDSS 6–6 0 UnitValuesParameter Symbol min. typ. max. DC Characteristics µAGate 1 leakage current – VG1S = 5 V, VG2S =VDS = 0 – IG1SS ––2 0 Gate 2 leakage current – VG2S = 5 V, VG1S =VDS = 0 – IG2SS ––2 0 AC Characteristics mSForward transconductance VDS = 5 V,VG2S = 2 V,ID = 10 mA,f = 1 kHz gfs –2 5 – Output capacitance VG2S = 2 V,VDS = 5 V,ID = 10 mA,f = 1 MHz C dss – 0.5 – dBNoise figure VG2S = 2 V,VDS = 5 V,ID = 10 mA,f = 1.75 GHz VG2S = 2 V,VDS = 5 V,ID = 10 mA,f = 800 MHz F 1.8 1.1 pFGate 1 input capacitance V G2S = 2 V,VDS = 5 V,ID = 10 mA,f = 1 MHz C gfss – 0.95 – Control range VG2S = 2 V … – 3 V Δ G psc –5 0 – Power gain V G2S = 2 V,VDS = 5 V,ID = 10 mA,f = 1.75 GHz VG2S = 2 V,VDS = 5 V,ID = 10 mA,f = 800 MHz G ps

Total power dissipationPtot =f (TA *;TS) *Package mounted on alumina Gate 1 forward transconductance gfs1 = f(V G1S ) VDS = 5 V, f = 1 kHz Output characteristicsID =f (V DS ) VG2S = 2 V Gate 1 forward transconductance gfs1 = f(V G2S ) VDS = 5 V, f = 1 kHz

Drain currentID =f (V G1S ) VDS = 5 V Gate 1 input transconductance C g1ss =f (ID ) VG2S = 2 V,VDS = 5 V,f = 0.1 – 1 GHz Drain currentID =f (V G2S ) VDS = 5 V Output capacitanceC dss =f (V DS ) VG2S = 2 V,ID = 10 mA,f = 0.1 – 1 GHz

Gate 1 input admittancey11s VDS = 5 V,VG2S = 2 V,ID = 10 mA Output admittancey22s VDS = 5 V,VG2S = 2 V,ID = 10 mA Gate 1 forward transfer admittancey21s VDS = 5 V,VG2S = 2 V,ID = 10 mA Common Source Admittance Parameters,G 2 RF grounded

Common Source S-Parameters, G 2 RF grounded fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.06 0.08 0.10 0.15 0.20 0.25 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.50 1.60 1.80 2.00 2.20 2.40 2.50 2.60 2.80 3.00 0.999 0.998 0.998 0.997 0.993 0.989 0.987 0.975 0.965 0.951 0.935 0.918 0.900 0.877 0.883 0.773 0.744 0.720 0.666 0.614 0.556 0.497 0.466 0.449 0.408 0.375 – 2.4 – 3.2 – 4.1 – 6.0 – 8.0 – 10.1 – 12.1 – 16.0 – 19.9 – 23.8 – 27.5 – 31.4 – 35.2 – 39.0 – 46.6 – 53.7 – 56.8 – 60.1 – 66.2 – 72.8 – 80.3 – 87.2 – 90.2 – 92.8 – 97.1 – 101.7 3.21 3.21 3.21 3.22 3.22 3.21 3.21 3.18 3.15 3.12 3.09 3.05 3.03 3.02 2.96 2.85 2.77 2.74 2.64 2.59 2.53 2.45 2.38 2.34 2.24 2.17 176.9 175.5 174.3 171.4 168.4 165.5 162.5 156.6 150.7 145.0 139.3 134.0 128.5 122.9 111.4 99.7 94.4 89.2 78.9 68.6 57.4 45.6 40.0 34.5 23.6 12.2 0.001 0.001 0.001 0.002 0.002 0.003 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.009 0.010 0.011 0.012 0.012 0.012 0.012 0.012 0.010 0.009 0.008 0.005 0.002 81.8 85.8 90.8 84.2 88.1 84.4 83.3 79.6 78.6 78.0 76.6 73.3 70.4 69.5 66.4 59.9 59.9 57.5 54.1 49.2 43.7 39.4 35.2 32.2 25.1 – 25.0 0.963 0.963 0.962 0.962 0.962 0.962 0.962 0.961 0.960 0.960 0.961 0.958 0.956 0.955 0.953 0.949 0.949 0.949 0.948 0.945 0.941 0.937 0.936 0.936 0.937 0.934 – 1.0 – 1.4 – 1.7 – 2.5 – 3.4 – 4.3 – 5.2 – 6.8 – 8.5 – 10.3 – 12.0 – 13.7 – 15.4 – 17.0 – 20.6 – 24.3 – 26.2 – 27.9 – 31.5 – 35.3 – 39.4 – 44.4 – 47.0 – 49.6 – 54.6 – 59.1 VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50Ω

S11,S22 =f (f),Z-plane VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50Ω S12,S21 =f (f) VDS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50Ω