CCS050M12CM2 CREE | Alldatasheet

Document overview

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Technical content

Features

  • Ultra Low Loss
  • Zero Reverse Recovery Current
  • Zero Turn-off Tail Current
  • High-Frequency Operation
  • Positive Temperature Coefficient on VF and VDS(on)
  • Cu Baseplate, AIN DBC System Benefits
  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Ease of Transistor Gate Control
  • Reduced Cooling Requirements
  • Reduced System Cost

Applications

  • Solar Inverters
  • UPS and SMPS
  • Induction Heating
  • Regen Drives
  • 3-Phase PFC
  • Motor Drives Package Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDS Drain - Source Voltage 1.2 kV VGS Gate - Source Voltage +25/-10 V ID Continuous Drain Current A VGS = 20V, TC=25˚C Fig. 21

50 VGS = 20V, TC=100˚C

ID(pulse) Pulsed Drain Current 250 A Pulse width tP = 50 μA Rate limited by Tjmax,TC = 25˚C TJ Junction Temperature 150 ˚C TC ,TSTG Case and Storage Temperature Range -40 to +150 ˚C Visol Case Isolation Voltage 2.5 kV DC, t=1min LStray Stray Inductance 30 nH Measured from pins 20 to 21 M Mounting Torque 5.0 Nm G Weight 180 g PD Power Dissipation 337 W TC = 25ºC, TJ < 150ºC Part Number Package Marking CCS050M12CM2 Six-Pack CCS050M12CM2 VDS 1.2 kV ID (TC = 100˚C) 50 A RDS(on) (TJ = 25˚C) 25 mΩ EOFF (TJ = 150˚C) 0.6 mJ

CCS050M12CM2,Rev. - Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown Voltage 1.2 kV VGS, = 0V, ID = 100 uA VGS(th) Gate Threshold Voltage 2.3 V VDS = 10 V, ID = 2.5 mA 1.6 VDS = 10 V, ID = 2.5 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1.2 kV, VGS = 0V IGSS Gate-Source Leakage Current 0.5 μA VGS, = 20 V, VDS = 0V RDS(on) On State Resistance 25 34 mΩ VGS = 20 V, ID = 50 A Fig. 4 5,6,743 63 VGS = 20 V, ID = 50 A, TJ = 150ºC gfs Transconductance S VDS = 20 V, ID = 50 A Fig. 8

21 VDS = 20 V, ID = 50 A, TJ = 150ºC

Ciss Input Capacitance 2.810 nF VDS = 800V, VGS = 0V f = 1MHz, VAC = 25mV Fig. 16,17 Coss Output Capacitance 0.393 Crss Reverse Transfer Capacitance 0.014 EON Turn-On Switching Energy 1.1 mJ VDD = 600V, VGS = +20V/-5V ID = 50A, RG = 20Ω Inductive Load = 200 μH Note: IEC 60747-8-4 Definitions Fig. 18 EOff Turn-Off Switching Energy 0.6 mJ RG Internal Gate Resistance 1.5 Ω f = 1MHz, VAC = 25mV QG Gate Charge 180 nC VDD= 800V, ID= 50A Fig. 15 Resistive Switching td(on) Turn-on delay time 21 ns VDD = 800V, RLOAD = 8 Ω VGS = +20/-2V, RG = 3.8 Ω Note: IEC 60747-8-4 Definitions tr(on) VSD fall time 90% to 10% 30 ns td(off) Turn-off delay time 50 ns tf(off) VSD rise time 10% to 90% 19 ns Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots.

CCS050M12CM2,Rev. - Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 1.6 1.85 V IF = 50A, VGS = 0

2.2 IF = 50A, TJ = 150ºC

QC Total Capacitive Charge 280 μC IF = 25A, VR = 1000V diF/dt = 500 A/μs, TJ = 25ºCtRR Reverse Recovery Time TBD ns ERR Reverse Recovery Energy TBD mJ C Total Capacitance 3.42 nF VR=0V, f = 1MHz, TJ = 25ºC

0.23 VR=400V, f = 1MHz, TJ = 25ºC

0.18 VR=800V, f = 1MHz, TJ = 25ºC

IF Continuous Forward Current 50 A VGS = -5V, Tcase = 100ºC Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.37 0.49 ˚C/W RthJCD Thermal Resistance Juction-to-Case for Diode 0.42 0.48

CCS050M12CM2,Rev. - This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-Rec is a trademark of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Package Dimensions (mm)