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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator System Benefits
  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Applications

  • Solar Inverter
  • 3-Phase PFC
  • Regen Drive
  • UPS and SMPS
  • Motor Drive Package Part Number Package Marking CCS020M12CM2 Six-Pack CCS020M12CM2 VDS 1.2 kV Esw, Total @ 20A, 150 ˚C 0.48 mJ RDS(on) 80 mΩ Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/20 V Recommended operational values ID Continuous MOSFET Drain Current 29.5 A VGS = 20 V, TC = 25 ˚C Fig. 25

20 VGS = 20 V, TC = 90 ˚C

ID(pulse) Pulsed Drain Current 80 A Pulse width tp limited by TJ(max) IF Continuous Diode Forward Current A VGS = -5 V, TC = 25 ˚C

27 VGS = -5 V, TC = 90 ˚C

TJmax Junction Temperature -40 to +150 ˚C TC ,TSTG Case and Storage Temperature Range -40 to +125 ˚C Visol Case Isolation Voltage 4.5 kV AC, 50 Hz , 1 min LStray Stray Inductance 30 nH Measured between terminals 25, 26 and 27, 28 PD Power Dissipation 167 W TC = 25 ˚C, TJ = 150 ˚C Fig. 26

CCS020M12CM2,Rev. - Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain - Source Breakdown Voltage 1.2 kV VGS, = 0 V, ID = 100 µA VGS(th) Gate Threshold Voltage 1.7 2.2 V VDS = 10 V, ID = 1 mA Fig. 7

1.6 VDS = 10 V, ID = 1 mA, TJ = 150 ˚C

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1.2 kV, VGS = 0V IDSS Zero Gate Voltage Drain Current 10 250 μA VDS = 1.2 kV, VGS = 0V,TJ = 150 ˚C IGSS Gate-Source Leakage Current 1 250 nA VGS = 20 V, VDS = 0V RDS(on) On State Resistance 80 98 mΩ VGS = 20 V, IDS = 20 A Fig. 4-6145 208 VGS = 20 V, IDS = 20 A, TJ = 150 ˚C gfs Transconductance 9.8 S VDS = 20 V, IDS = 20 A Fig. 8

8.5 VDS = 20 V, ID = 20 A, TJ = 150 ˚C

Ciss Input Capacitance 900 pF VDS = 800 V, f = 1 MHz, VAC = 25 mV Fig. 16,17Coss Output Capacitance 181 Crss Reverse Transfer Capacitance 5.9 Eon Turn-On Switching Energy 0.41 mJ VDD = 800 V, VGS = -5V/+20V ID = 20 A, RG(ext) = 2.5 Ω Load = 412 μH, TJ = 150 ˚C Note: IEC 60747-8-4 Definitions Fig. 22 EOff Turn-Off Switching Energy 0.07 mJ RG (int) Internal Gate Resistance 3.8 Ω f = 1 MHz, VAC = 25 mV QGS Gate-Source Charge 16.1 nC VDD= 800 V, VGS = -5V/+20V, ID= 20 A, Per JEDEC24 pg 27 Fig. 15QGD Gate-Drain Charge 20.7 QG Total Gate Charge 61.5 td(on) Turn-on delay time 10 ns VDD = 800V, VGS = -5/+20V, ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Note: IEC 60747-8-4, pg 83 Resistive load Fig. 24tr(on) VSD fall time 90% to 10% 14 ns td(off) Turn-off delay time 22.4 ns tf(off) VSD rise time 10% to 90% 53 ns VSD Diode Forward Voltage 1.5 1.7 V IF = 20 A, VGS = 0, TJ = 25 ˚C Fig. 10 1.8 2.3 IF = 20 A, VGS = 0, TJ = 150 ˚C Fig. 11 QC Total Capacitive Charge 0.27 μC ISD = 20 A, VDS = 800V di/dt = 1500 A/μs, VGS = -5V Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.7 0.75 ˚C/W Fig. 27 RthJCD Thermal Resistance Juction-to-Case for Diode 0.8 0.85 Fig. 28 Additional Module Data Symbol Condition Max. Unit Test Condition W Weight 180 g M Mounting Torque 5.0 Nm To Heatsink and terminals Clearance Distance 14.09 mm Terminal to terminal Creepage Distance 14.11 mm Terminal to terminal 17.46 mm Terminal to baseplate

Figure 31. Resistive Switching Time Description

CCS020M12CM2,Rev. - Package Dimensions (mm) CCS020M12CM2 Schematic

Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] CCS020M12CM2 Rev - Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes