CBR50-020P CENTRAL | Alldatasheet
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Technical content
MAXIMUM RATINGS (TA=25°C) CBR50- CBR50- CBR50- CBR50- CBR50- SYMBOL 020P 040P 060P 080P 100P UNITS Peak Repetitive Reverse Voltage V RRM 200 400 600 800 1000 V DC Blocking Voltage V R 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 140 280 420 560 700 V Average Forward Current (TC=55°C) I O 50 A Peak Forward Surge Current I FSM 400 A Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.5 °C/W RMS Isolation Voltage (case to lead) V iso 2500 V ac ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IR VR=Rated VRRM, TC=25°C 5.0 µA IR VR=Rated VRRM, TC=125°C 500 µA VF IF=25A 1.1 V CJ VR=4.0V, f=1.0MHz 300 pF CBR50-020P SERIES
50 AMP
Semiconductor Corp. TM R0 (31-August 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR50-020P series types are silicon single phase full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built in metal baseplate for heat sink mounting. MARKING CODE: FULL PART NUMBER
Semiconductor Corp. TM CASE FP - MECHANICAL OUTLINE CBR50-020P SERIES R0 (31-August 2004) MARKING CODE: FULL PART NUMBER SYMBOL MIN MAX MIN MAX A 1.115 1.135 28.32 28.83 B 0.692 0.732 17.58 18.59 C 1.115 1.135 28.32 28.83 D 0.542 0.582 13.77 14.78 E 0.632 0.672 16.05 17.07 G 0.632 0.672 16.05 17.07 H 0.740 0.840 18.80 21.34 J 0.290 0.310 7.37 7.87 K 0.030 0.034 0.76 0.86 L M (DIA.) CASE FP (REV:R1) 2.390.940 DIMENSIONS INCHES MILLIMETERS 6.350.250