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Document overview

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Technical content

Features

  • Ultra Low Loss, Low (5 nH) Inductance
  • Ultra-Fast Switching Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • AlSiC Baseplate and Si3N4 AMB Substrate
  • Ease of Paralleling
  • High Temperature Packaging, TJ(max) = 175 °C
  • AS9100 / ISO9001 Certified Manufacturing System Benefits
  • Enables Compact, Lightweight Systems
  • High Efficiency Operation
  • Reduced Thermal Requirements

Applications

  • High-Efficiency Converters / Inverters
  • Motor & Traction Drives
  • Smart-Grid / Grid-Tied Distributed Generation Package 65mm x 110mm x 10mm Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage, Maximum values -10/+25 V TJ = -55 to 150 °C -10/+23 TJ = -55 to 175 °C VGSop Gate - Source Voltage, Recommended Operation values -5/+20 V TJ = -55 to 150 °C -5/+18 TJ = -55 to 175 °C ID Continuous Drain Current 444 A TC = 25 ˚C TJ = 175 °C Fig. 17

256 TC = 125˚C, TJ = 175 °C

TJmax Junction Temperature 175 ˚C TC ,TSTG Case and Storage Temperature Range -55 to +175 ˚C Visol Case Isolation Voltage 1.2 kV AC, 50 Hz , 1 min PD Power Dissipation 1500 W TC = 25 ˚C, TJ = 175 ˚C (per switch) Fig. 16 Part Number Package Marking CAS325M12HM2 Half-Bridge Module CAS325M12HM2 VDS 1.2 kV Esw, Total @ 600V, 300A 9.3 mJ RDS(on) 3.6 mΩ

CAS325M12HM2, Rev. A, 12-2016 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDSS Drain - Source Blocking Voltage 1.2 kV VGS = -5 V, ID = 2 mA VGS(th) Gate Threshold Voltage 2.0 2.6 4 V VDS =VGS, ID= 105 mA

2.0 VDS =VGS, ID= 105 mA, TJ = 175 ˚C

IDSS Zero Gate Voltage Drain Current 720 2000 μA VDS = 1.2 kV, VGS = -5 V IGSS Gate-Source Leakage Current 3.5 nA VGS = 20 V, VDS = 0 V RDS(on) On State Resistance 3.6 4.3 mΩ VGS = 20 V, IDS = 400 A Fig. 5

7.6 VGS = 18 V, IDS = 400 A, TJ = 175 ˚C

Ciss Input Capacitance 19.5 nF VGS = 0 V, VDS = 1000 V, f = 1 MHz, VAC = 25 mV Fig. 11, 12Coss Output Capacitance 1.54 Crss Reverse Transfer Capacitance 0.10 Eon Turn-On Switching Energy 5.6 mJ VDD = 600 V, VGS = -5V/+20V ID = 300 A, RG(ext) = 2Ω Note: IEC 60747-8-4 Definitions Fig. 13 EOff Turn-Off Switching Energy 3.7 QGS Gate-Source Charge 322 nC VDS= 800 V, VGS = -5V/+20V, ID= 350 A, Per IEC 60747-8-4QGD Gate-Drain Charge 350 QG Total Gate Charge 1127 dff Free-Wheeling SiC Schottky Diode Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 1.7 2.0 V IF = 350 A, VGS = -5 V Fig. 6 2.5 2.8 IF = 350 A, TJ = 175 ˚C, VGS = -5 V QC Total Capacitive Charge 4.3 μC Includes Schottky & Body diodes Note: The reverse recovery is purely capacitive Thermal Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.085 0.100 0.115 ˚C/W Fig. 18,19RthJCD Thermal Resistance Juction-to-Case for Diode 0.094 0.110 0.127 Additional Module Data Symbol Parameter Min. Typ. Max. Unit Test Condtion W Weight 140 g M Mounting Torque 0.9 1.1 1.3 Nm Power Terminals, M4 Bolts 3 4.5 5 Baseplate, M6 Bolts LCE Loop Inductance 5 nH

Figure 19. Diode Junction to Case Thermal Impedance

CAS325M12HM2 Rev. A, 12-2016 Copyright © 2014 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.
  • The module utilizes the ESQT-105-02-G-D-XXX family of elevated socket connectors from Samtec, available in varying height ac- cording to the customer’s preference
  • Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit
  • Some values were obtained from the CPM2-1200-0025B and CPW5-1200-Z050B device datasheet.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems.
  • The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection. Important Notes