CAS300M12BM2

CAS300M12BM2 CREE | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module Z-FET™ MOSFET and Z-Rec™ Diode Module Features Package 62 mm x 106 mm x 30 mm  Ultra Low Loss  High-Frequency Operation  Zero Reverse Recovery Current from Diode  Zero Turn-off Tail Current from MOSFET  Normally-off, fail-safe device operation  Ease of paralleling  Copper baseplate and aluminum nitride insulator System Benefits  Enables compact and lightweight systems  High efficiency operation  Mitigates over-voltage protection  Reduces thermal requirements  Enables simplified topologies

Applications

 Induction Heating  Motor Drives  Solar and Wind Inverters  UPS and SMPS  Traction Maximum Ratings (TC = 25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain – Source Voltage 1.2 kV VGSmax Gate – Source Voltage -10/+25 V Absolute maximum values VGSop Gate – Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current 404 A VGS = 20 V, TC = 25 °C Fig 20 285 A VGS = 20 V, TC = 90 °C IDpulse Pulsed Drain Current 1500 A Pulse width tP = 200 µs repetition rate limited by TJ(max), TC = 25°C TJmax Junction Temperature 150 °C TC Tstg Case and Storage Temperature Range -40 to +125 °C Ptot Maximum Power Dissipation 1660 W TC = 25 °C, TJ = 150 °C Visol Case Isolation Voltage 4.0 kV AC, 50 Hz, 1 min Lstray Stray Inductance 14 nH Measured between terminals 2 and 3 M Mounting Torque 5 Nm To heatsink and terminals G Weight 300 g Clearance Distance 12 mm Terminal to terminal Creepage Distance 30 mm Terminal to terminal 40 mm Terminal to baseplate VDS = 1.2 kV Esw,Total@300A = 12.0 mJ RDS(on) = 5.0 mΩ Part Number Package Marking CAS300M12BM2 Half Bridge Module CAS300M12BM2

Electrical Characteristics (TC = 25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes Min Typ Max V(BR)DSS Drain – Source Breakdown Voltage 1.2 kV VGS = 0 V, IDS = 1 mA VGS(th) Gate Threshold Voltage 2.0 2.3 V VDS = 10 V, IDS = 15 mA Fig 11 IDSS Zero Gate Voltage Drain Current 500 2000 µA VDS = 1.2 kV, VGS = 0 V 1000 VDS = 1.2 kV, VGS = 0 V TJ = 150 °C IGSS Gate-Source Leakage Current 1 100 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 5.0 5.7 mΩ VGS = 20 V, IDS = 300 A Fig 4, 5 and 6 8.6 9.8 VGS = 20 V, IDS = 300 A, TJ = 150 °C gfs Transconductance 94.8 S VDS = 20 V, IDS = 300 A Fig 7

93.3 VDS = 20 V, IDS = 300 A,

TJ = 150 °C CISS Input Capacitance 11.7 nF VDS = 600 V f = 200 kHz, VAC = 25 mV Fig 17, 18 COSS Output Capacitance 2.55 CRSS Reverse Transfer Capacitance 0.07 td(on) Turn-On Delay Time 76 VDD = 600 V, VGS = -5/20 V ID = 300 A, RG(ext) = 2.5 Ω, Timing relative to VDS Per IEC60747-8-4 pg 83 Inductive Load Fig 24 tr Rise Time 68 td(off) Turn-Off Delay Time 168 tf Fall Time 43 EON Turn-On Switching Energy 6.05 mJ VDS = 600 V, VGS = -5 / 20 V IDS = 300 A, RG = 2.5 Ω, Inductive Load Fig 25 EOFF Turn-Off Switching Energy 5.95 Free-Wheeling Diode Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max VSD Diode Forward Voltage 1.7 2.0 V ISD = 300 A, TJ = 25°C, VGS = 0 V Fig 8, 9 and 10 2.2 2.5 V ISD = 300 A, TJ = 150°C, VGS = 0 V QC Total Capacitive Charge 3.2 µC Note: The reverse recovery is purely capacitive. Gate Charge Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max QGS Gate to Source Charge 166 nC VDS = 800 V, VGS = -5 /+ 20 V IDS = 300 Amps Per JEDEC24 pg 27 Fig 12 QGD Gate to Drain Charge 475 QG Total Gate Charge 1025 RG Internal Gate Resistance 3.0 Ω f = 200 kHz, VAC = 25 mV Thermal Characteristics Symbol Parameter Value Unit Test Conditions Notes Min Typ Max RθJCM Thermal Resistance Junction to Case for MOSFET 0.070 0.075 °C/W TC = 90 °C, Tj =150 °C Pdis = Pmax Fig 17 RθJCD Thermal Resistance Junction to Case for Diode 0.073 0.076 Fig 18

Fig 1. Typical Output Characteristics TJ = -40 °C Fig 2. Typical Output Characteristics TJ = 25 °C Fig 3. Typical Output Characteristics TJ = 150 °C Fig 4. Normalized On-Resistance vs. Temperature Fig 5. Typical On-Resistance vs. Temperature and Gate Voltage Fig 6. Typical On-Resistance vs. Gate Voltage 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = -40°C tp = 200 µs VGS = 20 V VGS = 18 V VGS = 10 V VGS = 12 V VGS = 14 V VGS = 16 V 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 25°C tp = 200 µs VGS = 20 V VGS = 18 V VGS = 10 V VGS = 12 V VGS = 14 V VGS = 16 V 100 200 300 400 500 600 0 1 2 3 4 5 6 7 8 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 150°C tp = 200 µs VGS = 20 V VGS = 18 V VGS = 10 V VGS = 12 V VGS = 14 V VGS = 16 V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 On Resistance, RDS On (p.u.) Junction Temperature, TJ (°C) Conditions: IDS = 300 A VGS = 20 V tp = 200 µs -50 -25 0 25 50 75 100 125 150 On Resistance, RDS On (mΩ) Junction Temperature, TJ (°C) Conditions: IDS = 300 A tp = 200 µs VGS = 20 V VGS = 18 V VGS = 16 V VGS = 14 V VGS = 12 V 10 12 14 16 18 20 On-Resistance, RDS ON (mΩ) Gate-Source Voltage, VGS (V) Tj = -40 °C Tj = 25 °C Tj = 150 °C Conditions: IDS = 300 A tp = 200 µs

Fig 7. Typical Transfer Characteristic For Various Temperatures Fig 8. Typical Diode Behavior TJ = -40 °C Fig 9. Typical Diode Behavior TJ = 25 °C Fig 10. Typical Diode Behavior TJ = 150 °C Fig 11. Typical Threshold Voltage vs. Temperature Fig 12. Typical Gate Charge 100 200 300 400 500 0 2 4 6 8 10 12 14 Drain-Source Current, IDS (A) Gate-Source Voltage, VGS (V) Conditions: VDS = 20 V tp < 200 µs TJ = 150 °C TJ = -40 °C TJ = 25 °C -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = -40 °C tp = 200 µs VGS = -2 V VGS = -5 V VGS = 0 V -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 25°C tp = 200 µs VGS = -2 V VGS = -5 V VGS = 0 V -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 150°C tp = 200 µs VGS = -2 V VGS = -5 V VGS = 0 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 Threshold Voltage, Vth (V) Junction Temperature TJ (°C) Conditions VDS = 10 V IDS = 0.5 mA Conditions VDS = 10 V IDS = 15 mA 0 200 400 600 800 1000 1200 Gate-Source Voltage, VGS (V) Gate Charge (nC) Conditions: TJ = 25 °C IDS = 300 A VDS = 1000 V

Fig 13. Typical 3rd Quadrant Behavior TJ = -40 °C Fig 14. Typical 3rd Quadrant Behavior TJ = 25 °C Fig 15. Typical 3rd Quadrant Behavior TJ = 150 °C Fig 16. Typical Output Capacitor Stored Energy Fig 17. Typical Capacitances vs. Drain-Source Voltage. (0-200V) Fig 18. Typical Capacitances vs. Drain-Source Voltage. (0-1000V) -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 25 °C tp = 200 µs Conditions: TJ = -40 °C tp = 200 µs VGS = 10 V VGS = 5 V VGS = 20 V VGS = 15 V VGS = 0 V -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 25 °C tp = 200 µs Conditions: TJ = 25°C tp = 200 µs VGS = 10 V VGS = 5 V VGS = 20 V VGS = 15 V VGS = 0 V -600 -500 -400 -300 -200 -100 Drain-Source Current, IDS (A) Drain-Source Voltage VDS (V) Conditions: TJ = 25 °C tp = 200 µs Conditions: TJ = 150°C tp = 200 µs VGS = 10 V VGS = 5 V VGS = 20 V VGS = 15 V VGS = 0 V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 200 400 600 800 1000 1200 Stored Energy, EOSS (mJ) Drain to Source Voltage, VDS (V) 0.01 0.1 100 0 50 100 150 200 Capacitance (nF) Drain-Source Voltage, VDS (V) Ciss Coss Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Crss 0.01 0.1 100 0 200 400 600 800 1000 Capacitance (nF) Drain-Source Voltage, VDS (V) Ciss Coss Conditions: TJ = 25 °C VAC = 25 mV f = 200 kHz Crss

Fig 19. Max. Continuous Power Derating Curve vs. Case Temperature. Fig 20. Max. Continuous Current Derating Curve vs. Case Temperature Fig 21. Typical Transient Thermal Impedance - MOSFET Fig 22. Typical Transient Thermal Impedance - DIODE Fig 23. MOSFET Safe Operating Area Fig 24. Typical Inductive Switching Time vs Gate Resistance (VDD = 600V, ID = 300A) 200 400 600 800 1000 1200 1400 1600 1800 -25 0 25 50 75 100 125 Maximum Dissipated Power, Ptot (W) Case Temperature, TC (°C) Conditions: TJ ≤ 150 °C 100 150 200 250 300 350 400 450 -25 0 25 50 75 100 125 Drain-Source Continous Current, IDS (DC) (A) Case Temperature, TC (°C) Conditions: TJ ≤ 150 °C 10E-6 100E-6 1E-3 10E-3 100E-3 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 Junction To Case Impedance, ZthJC (oC/W) Time, tp (s) 0.5 0.3 0.1 0.05 0.02 0.01 SinglePulse 10E-6 100E-6 1E-3 10E-3 100E-3 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 Junction To Case Impedance, ZthJC (oC/W) Time, tp (s) 0.5 0.3 0.1 0.05 0.02 0.01 SinglePulse 0.01 0.10 1.00 10.00 100.00 1000.00 Drain-Source Current, IDS (A) Drain-Source Voltage, VDS (V) 100 µs 1 ms 1 µs Conditions: TC = 25 °C D = 0, Parameter: tp Limited by RDS On 100 ms 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 Time (ns) External Gate Resistor, RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 600 V IDS = 300 A VGS = -5/+20 V td (off) td (on) tf tr

Fig 25. Typical Clamped Inductive Switching Energy vs Drain Current (VDD = 600V) Fig 26. Typical Clamped Inductive Switching Energy vs Drain Current (VDD = 800V) Fig 27. Typical Switching Loss vs. Temperature Fig 28. Typical Switching Loss vs. Gate Resistance 0 50 100 150 200 250 300 350 400 450 Switching Loss (mJ) Drain to Source Current, IDS (A) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 0 50 100 150 200 250 300 350 400 450 Switching Loss (mJ) Drain to Source Current, IDS (A) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 0 25 50 75 100 125 150 175 Switching Loss (mJ) Junction Temperature, TJ (°C) EOff EOn ETotal Conditions: VDD = 600 V RG(ext) = 2.5 Ω IDS =300 A VGS = -5/+20 V L = 77 μH 100 120 0 5 10 15 20 25 30 35 40 45 Switching Loss (mJ) External Gate Resistor RG(ext) (Ohms) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 600 V IDS =300 A VGS = -5/+20 V L = 77 μH

Mechanical Characteristics (in mm)