CAB011M12FM3 CREE | Alldatasheet

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Copyright ©2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, 2021-01-11 CAB011M12FM3 4600 Silicon Dr., Durham, NC 27703 CAB011M12FM3

1200 V, 11 mΩ All-Silicon Carbide

  • Ultra-Low Loss
  • High Frequency Operation
  • Zero Turn-Off Tail Current from MOSFET
  • Normally-Off, Fail-Safe Device Operation VDS 1200 V RDS(on) 11 mΩ System Benefits
  • Enables Compact, Lightweight Systems
  • Increased System Efficiency due to Low Switching & Conduction Losses of SiC
  • Reduced Thermal Requirements and System Cost

Applications

  • EV Chargers
  • Solar
  • High-Efficiency Converters / Inverters
  • Motor & Traction Drives
  • Smart-Grid / Grid-Tied Distributed Generation Package Maximum Parameters (Verified by Design) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 ns Fig. 33 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Static ID DC Continuous Drain Current (TVJ ≤ 150 ˚C) 105 A VGS = 15 V, TH= 50 ˚C, TVJ ≤ 150 ˚C Fig. 20 DC Continuous Drain Current (TVJ ≤ 175 ˚C) 109 VGS = 15 V, TH= 50 ˚C, TVJ ≤ 175 ˚C ISD BD DC Source-Drain Current (Body Diode) 55 VGS = - 4 V, TH = 50 ˚C, TVJ ≤ 175 ˚C ID (pulsed) Maximum Pulsed Drain Current 218 tPmax limited by Tjmax VGS = 15 V, TH = 50 ˚C Fig. 17 TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 150 °C Operation -40 175 °C Intermittent with Reduced Life

Copyright ©2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, 2021-01-11 CAB011M12FM3 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, TVJ = -40 °C VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 VDS = VGS, ID = 35 mA IDSS Zero Gate Voltage Drain Current 2 50 μA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 0.02 0.5 VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 10.5 14.0 mΩ VGS = 15 V, ID = 100 A Fig. 2 Fig. 316.3 VGS = 15 V, ID = 100 A, TVJ = 150 °C

19.0 VGS = 15 V, ID = 100 A, TVJ = 175 °C

S VDS= 20 V, IDS= 100 A Fig. 4

69 VDS= 20 V, IDS= 100 A, TVJ = 150 °C

Turn-On Switching Energy, TJ = 25 °C TVJ = 125 °C TVJ = 150 °C 1.28 1.34 1.43 mJ VDS = 600 V, ID = 100 A, VGS = -4 V/15 V, RG(OFF) = 1.0 Ω, RG(ON) = 1.0 Ω L= 13.6 μH Fig. 11 Fig. 13 EOff Turn-Off Switching Energy, TJ = 25 °C TVJ = 125 °C TVJ = 150 °C 0.71 0.70 0.71 RG(int) Internal Gate Resistance 3.2 Ω TVJ = 25 °C, f = 100 kHz, VAC = 25 mV Ciss Input Capacitance 10.3 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9Coss Output Capacitance 0.39 Crss Reverse Transfer Capacitance 30 pF QGS Gate to Source Charge 98 nC VDS = 800 V, VGS = -4 V/15 V ID = 100 A Per IEC60747-8-4 pg 21 QGD Gate to Drain Charge 100 QG Total Gate Charge 324 Rth JH FET Thermal Resistance, Junction to Heatsink 0.553 °C/W Fig. 17

Copyright ©2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, 2021-01-11 CAB011M12FM3 4600 Silicon Dr., Durham, NC 27703 Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions 1.98 mΩ TC = 25 °C, ID = 100 A, Note 1

2.23 TC = 125 °C, ID = 100 A, Note 1

1.85 TC = 25 °C, ID = 100 A, Note 1

2.06 TC = 125 °C, ID = 100 A, Note 1

LStray Stray Inductance 11.4 nH Between Terminals DC+ and DC- TC Case Temperature -40 125 °C W Weight 21 g MS Mounting Torque 2.0 2.3 N-m M4 bolts Visol Case Isolation Voltage 3 kV AC, 50 Hz, 1 min CTI Comparative Tracking Index 200 Clearance Distance 5.0 mm Terminal to Terminal

10.0 Terminal to Heatsink

6.3 Terminal to Terminal

11.5 Terminal to Heatsink

Note 1. Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance. Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Body Diode Forward Voltage 5.1 V VGS = -4 V, ISD = 100 A Fig. 7

4.7 VGS = -4 V, ISD = 100 A, TVJ = 150 °C

trr Reverse Recovery Time 20.5 ns VGS = -4 V, ISD = 100 A, VR = 600 V di/dt = 13.5 A/ns, RG(ON) = 1.0 Ω, TJ = 150 °C Fig. 32QRR Reverse Recovery Charge 1.85 μC IRRM Peak Reverse Recovery Current 144 A ERR Reverse Recovery Energy TJ = 25 °C TJ = 125 °C TJ = 150 °C 0.16 0.48 0.64 mJ VDS = 600 V, ID = 100 A, VGS = -4 V/15 V, RG(ON) = 1.0 Ω, L= 13.6 μH Fig. 14 Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note RNTC Rated Resistance 5.0 kΩ TNTC = 25 °C Fig. 23 ∆R/R Resistance Tolerance at 25°C -5 5 % β25/50 Beta Value (T2 = 50°C) 3380 K ±1% β25/80 Beta Value (T2 = 80°C) 3468 K ±1% β25/100 Beta Value (T2 = 100°C) 3523 K ±1% PMax Power Dissipation 10 mW TNTC = 25 °C NTC Thermistor Characterization

Copyright ©2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, 2021-01-11 CAB011M12FM3 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimension (mm)

Copyright ©2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 0, 2021-01-11 CAB011M12FM3 4600 Silicon Dr., Durham, NC 27703 Supporting Documents & Tools

  • Companion Gate Driver Boards
  • KIT-CRD-CIL12N-FMA: Dynamic Evaluation Board for Half-Bridge FM3 Modules
  • KIT-CRD-CIL12N-FMC: Dynamic Evaluation Board for Six-Pack FM3 Modules
  • Thermal Interface Material Application Note
  • PCB and Heatsink Mounting and Assembly Application Note
  • Dynamic Evaluation and Layout Recommendations Application Note Notes
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
  • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.