CA3018 GESS | Alldatasheet
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G E SOLID STATE O1 vel 3875081 0014588 5 I Arrays 3 35 CA3018, CA3018A ! 5 General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range Features: ‘= Matched monolithic general = CA9018A performance characteris purpose transistors ties controlled from 10 pA to 10 mA = Hre matched + 10% = Low noise figure - 3.2 dB typical at tm Ver matched + 2 mV CA3018A 1KHz (4 6m V CA3078) 8 Full military temperature range ca- ‘= Operation from DC to 120 MHz pability (-55 to +125°C) ws Wide operating current range ‘The CA3018 and CA3018A consist of four general purpose Applications silicon n-p-n transistors on @ common monolithic ‘a General use in signal processing substrate. systems in DC through VHF range ‘Two of the four transistors are connected in the Darlington = Custom designed differential configuration. The substrate is connected to @ separate amplitiors terminal for maximum flexibility. . Temperature compensated The transistors of the CA3018 and the CA3018A are well amplitiots plicatic suited to a wide variety of applications in low-power sys- . soe AO AE raat Note, the tems in the DC through VHF range. They may be used as Won Gag018 Integrated-Circult discrete transistors in ‘conventional circuits but In addition i " s Transistor Array” for suggested they provide the advantages of close electrical and thermal applications. maiching inherent in integrated circuit construction. * ‘The CA3018A is similar to the CA3018 but features tighter contro! of current gain, leakage, and offset parameters making it suitable for more critical applications requiring premium performance. a Pe astute
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Fig. 1— Die CA3018 and CA301 sg. 1 — Schematic Diagram for CA9018 and CASO16A File Number 338
G E SOLID STATE O1 DE 3875081 0014589 7 I wee ee = -- Arrays CA3018, CA3018A : Maximum Rotings, Absolute-Maximum Values, at TA=25°C The following ratings apply for each transistor in the device: CA3018 CA301B A cAs018 © CABOI8A Cottector-to-Emitter Voltege.Vogo * 15 1s V Collector-to-Base Voltage, Yopo ++ 20 30 Ov Power Dissipation, P: Collector-to-Substeate Voltage, Veig* 20 40 Vv Total package ve. sess eens 450 450 mW Collector Current, Ig vsetrse ses 50 50 mA Derate at 5 mW¥/°C for TT! >asec *The collector of each transistor of the CA3018 and CA3018A_ ‘Temperature Range: Ievisalated fom the taontaty by an integral diode, The Operating... ++++++++++++ “SS to +125 -55 to + 128°C ative point in the external circuit to maintain isolation be- LEAD TEMPERATURE (During Soldering) At distance 1/16 * 1/32 inch (1.59 + 0.79mm) Characteristics apply for each transistor in the CA3V18 and CA3018A as specified. Hanae: ELECTRICAL canoe cma TERISTICS CHARACTERISTICS | syupots| special Test covoiTions tars uit CURVES ot Ty = 25°C [we] “Tyo. [ume wn. T tye. [mo] rg] [cotec-cuat weet [coo _[venrtie® | ome [wo] - [om Tw] a] 2 | [eatetarouarcwent [iggo _|Veetvigd | - | eco sf - [meow [es [a [| Culecta-Cat Curent vag famagsmmor [owe frwmoe [-T [TT [ef at | Crlkctoloaite treakdoen Voge Caleta base [arte powewfemare [*[ @ [-] |e Toff | nitro Base bales [sec [renwofiewnes [et [-[s | [TT | Colette Teeth ey fsacimet ——Pmee [ewmue [>] # [-fe | To] vd | Gullectato nite - fsmmote [ow foe [Pm Pf To fot | igaloea 0 Fy i Sue Fava cant ven {ERA io |o|@ | Taster Ratio igen EI 0 ‘4 agit of Sti eta Rata “Vgy (GlaedTasisas Q 294 [ficmertem [fon [-[e [ow f=] ef Sai Fad Owes Taser Pat ater Pa vee {te mm | so Pari Gio woo | 280 ons ors {0am om emo [ox vee | BE Tenge Conte: rn tavetocoter Vote |LV8EL | vogavigsna Me] 7 On igen Le = ir Base (Q;Ho-Enitier (Q4) i Vogsv OE Teepe Colic BaseloEniter Votage HoVocol | vog-sv.tgstea a, Dartington Pai-03,04 at % Teepe cai: (Mae Yael Noctis Mag ‘Magnitude of Input-Oftset Voltage} = OT ince eee
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‘Arrays OLID STATE O1E 14590 De ™ : CA3018, CA3018A 43-25 ELECTRICAL CHARACTERISTICS, (CONT'D) lemon [* ESae [= -T-[= [-[e] = Equivaleat-Circuit omnes Farad Cones Tats Rati a Seatcicoitnmt pence [he | [-fas [-[- [os [pe Te | Special Oup ipatence | hae __|'*BMEVce*VaceteA es a =m, [pis [Poe PT] ‘atimaduewes [fT TE TP ravedtaste ate [Ve | SE ee reine ee Fo a CO Revere Tarte Aditance | [secne | sew [onto |e [ramenvin nana [hr [vopamgamn fm] wo [=| [ [= [wm | oy | [enteieoarcoenm [eee [vere |-| « [-[- | # [= tw [ | [cvcaicswcnmine [ton [vermin [fee [-| - | [- [ow {| = | [cacmiswecominalég, [ucimice | -[# -[- | # [-[Te] = | . STATIC CHARACTERISTICS Span i a a a a rr 77 ==] |, ee ee ee ey /4 ee ee: 7 Fe ee SS ZL | 8 oo. rs re ee wf a LZ Ee or 2 ee eee 77 a wz | eS, 7 7 A Es a 77 a 74 ee a, 77 | ee ee <7 A SSS Se Fs a | 7 ee ae ee ee 7 es ee peer amen A caer “uarenaTne aie Fig.2 - Typical Collector-To-Base Cutoff Current vs Fig.3 - Typical Collector-To-Emmiter Cutoff Current vs Ambient Temperature for Each Transistor. Ambient Temperature for Each Transistor,
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CA3018, CA3018A +4325 Ee Tr] . oe TOL eo | Be AS PTLD ay He nL TT coe Te=ti RL aH & | A eT TE TT ECCAHLLTTL_U,| BESS essai? | VET J TE TTT oor * ‘Or 1 Te ey oF e vs 1 « ©80 Fig.4 - Typical Static Forward Current-Transfer Fig.5 - Typical Static Forwgrd Current - Transfer Ratio Ratio and Beta Ratio for Transistors Q, for Darlington-connected Transisters Q3 and Qz vs Emitter Current. ‘and Q4 vs Emitter Current. 4 i evazstetatannegatsnatetasatstzssszetsrssansesestas PCT TU TTT Te) Sa Pier (|) | | Fig.6 - Typical Stotic Base-to-Emitter Voltage Fig.7 - Typical Base-To-Emitter Voltage Characteristic Characteristic and Input Offset Voltage for for Each Transistor vs Ambient Temperature Q] and Q vs Emitter Current, T7] COLLECTOR-TO-EMITTER VOLTS (Vc_)*3 S on EHEC EES oo Eee ie [Aj EE eerttfsaseee opanaaeeeceeiiaseevoe tits ETAL cas HHH HHH EHH EE EEE Ea AMOENT TEMPERATURE TAS sacs Fig.9 - Typical Static Input Voltage Characteristic for Fig.8 - Typical Offset Voltage Characteristic vs Darlington Pair (Q3 and Qy) vs Ambient Temperature Emitter Current e@
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CA3018, CA3018A T'93°25 Fg RoR ASS esissesotend p sssetasseseseaseassseassstarestontesertateas Esseutedeyssssztogsescsssssesttcttrstessited 5 aa Fett] Fig. 10 Typical Stotle Input Voltoge Characteristic for Lead S3zeadtaiensssseseeQccppaaseatecitoeeteteaal Darlington Pair (Q3 and Qy) vs SS men TOPEMTURE "cay TYPICAL DYNAMIC CHARACTERISTICS FOR EACH TRANSISTOR Sones cease ous mss Sante easter ors wae |_| oer Toren wre sates eureuone ae Ve er CO Re =A KL er et PRCT «LIES L. i | | Fr COLLECTOR MLLIAMPERES CO) agp COLLECTOR MALLUMPERES TO) sacs igs Fig.11(b) - Noise Figure vs Collector Current, Rs = 1K. Fig.11(a) - Noise Figure vs Collector Current, ee] are _[Seeitsemttevne ve 4 {Se Saye mall 71 | oo 7H ta ALLY og DEE NET Corea) | EEG ! ys (SSeS e . 7 te et SS ri] at an oz : é yt | L111 ort as Bw 7 | Baeza ob? | TT Ty Tn ete TTI = .———— 4 Fig.12 - Forward Current-Teansfer Ratio (hyg), Short- COLLECTOR MaLLIAMPERES (Tc) ‘ Circuit Input Impedance (h;_), Open-Circvit wace- ise Output Impedance (hog), and Open-Circuit Fig.11(c) - Noise Figure vs Collector Current, Reverse Voltage-Transfer Ratio (hye) ; Rs= 10 KO. vs Collector Current e@
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CA3018, CA3018A 7+: 43°25 TYPICAL DYNAMIC CHARACTERISTICS FOR EACH TRANSISTOR SSSR TER CRETE POT) aa caren crcmmce wrt TTT TY awn renpenarme Tae Seees [1 TTT Meer Sameer eer voersiveers|—T Ttt | [COLLECTOR MILLAMPERES (I¢)"1 Tart] 6|COLLEGTOR MILLIAMPERES (ic)! cnc B97 II | sity ri 8 COTO To Bt ee ooo B Pt A BT SS ee pe EAH, CCT NE es LOE NS oo OREN Boe er ¢ Coco econ) 4 : oo Bg TT tae HH Feces je 7A Bi Coo So Coe oer ae CaS Seer rr at tpecuncr t-Bu ia os trea iB i Fig.13 - Forward Transfer Admittance (Y 4.) Fig.14 - Input Admittance (Y jg) EES) See space | | I sire Ra teams E-4 LH | | | lore IS SMALL AT. FREQUENCIES.
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é BS Pty os ee By Ee es Oa be Cr ry Be ee Oe Sa, SES ee eo s CCITT ore is FEHR eee Bar Fig.15 - Output Admittance (Y g¢) Fig.16 - Reverse Transfer Admittance (Y;9) COLLECTOR-TO-EMITTER VOLTS (Vcel*3 borhstitteity AMBIENT TEMPERATURE (Ta)*28*C ebb feeds cassezati eee ee eta eS BT says se eaes esd treat ease edbvazstat feeretaiis igeewasta peatitaas 3 ees seen eee eee ee EEE Eo) :coe Secs Scere coeeeseett ett antes aeaaiaend ener ESSE iat trey rice eee Terre te ads Ses roses UH Gsttssani sErtacnea!getaaeass eenbaaeea ena canis dati oLLEGTON MLLMUPEES Ue) say ane Fig.17 - Typical Gain-Bandwidth Product (fy) vs Collector Current -_- oo — 845