C945

H945 KISEMICONDUCTOR | Alldatasheet

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Technical content

█ APPLICATIONS The H945 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 60 V IC=100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 50 V IC=100μA, I B=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE=100μA，IC=0 HFE DC Current Gain 90 600 VCE=6V , IC=1mA VCE(sat) Collector- Emitter Saturation V oltage 0.3 V IC=100mA, IB=10mA VBE(sat) Base-Emitter Saturation V oltage 1.0 V IC=100mA, IB=10mA ICBO Collector Cut-off Current 100 nA VCB=60V , IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V , IC=0 fT Current Gain-Bandwidth Product 250 MHz VCE=6V , IC=10mA Cob Output Capacitance 3.0 pF VCB=6V , IE=0，f=1MHz NF Noise Figure 4.0 dB VCE=6V,IC=0.5mA，f=1KHz， Rs=500Ω █ hFE Classification R Q P K 90—180 135—270 200—400 300—600 TO-92 C945 PNP S I L I C O N T R A N S I S T O R 1―Emitter，E 2―Base，B 3―Collector，C

PNP S I L I C O N T R A N S I S T O R