C710

2SC710 MITSUBISHI | Alldatasheet

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MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM - AM RADIO HIGH AND MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Units Mitsubishi 2SC710 is a resin sealed silicon NPN epitaxial type transistor OUTLINE DRAWING = designed for high frequency amplify application. JeSeMax yy zg FEATURE 2 @High gain 10.7MHz, MAG=45dB typ © ‘@Low noise figure 10.7MHz, NF=3.00B typ @smail package z | 00.45 @Low yre 10.7MH2, yre=-J9.11msS typ Ff APPLICATION l l High frequency oscillating, mix, frequency exchange and medium frequency 1.25 —m—}--—$1.25, amplifier of FM radio, AM radio. =| \\0d@ TERMINAL CONNECTOR

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: COLLECTOR = EIAJ: SC-43 JEMITTER JEDEC'TO.82 resemblance Wo “The dimanson without lorance represent contra value MAXIMUM RATINGS (Ta=25C) [ veso | Emiterto Base votage | [ veeo | Collectorto Emiter voltage [25 iTV | [ie | Coliectoreurent «mA [200 mw | ELECTRICAL CHARACTERISTICS (Ta=25) i a ed | ieso—["Gotector cut of eurrent | Veesasvie0 tna | [ica | Emiter cut of curent | VessaVie=d TT] | | [Tire = [0G torward curent gain ['Veesbv,icstma Cd | | 0 | — | [fr [Gain band wath product | Voes6v.ie=ma 50] || we | | cco [Collector output capacitance | Ves=6V.ieOfewWe SSO |r | [cent [ase tne cestnt | VentViezstmafcon ane aa [0 ts | [NF [Noise figure | Vos=6,e=-0.1mA-10.7 MHz Ra-5000 es =| + lanows hve cassicaonin ih abe [tem Je Tc y Oo Te | [tre [251070510 10 [9010 160_[ 150 t0 300 | Pot ELECTRIC 4-3

MITSUBISH! SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) 2SC710 FOR FM - AM RADIO HIGH AND MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE SILICON NPN EPITAXIAL TYPE _ TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE COMMON EMITTER INPUT x 0 PON TD) {a 5 = owl LEIP e | t XL Ld 2 CCC ee 8 \\ es E aan aC re

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MITSUBISHI SEMICONDUCTOR (SMALL-SIGNAL TRANSISTOR) FOR FM - AM RADIO HIGH AND MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE COMMON EMITTER, y PARAMETER (TYPICAL VALUE) (Ta=25°C) Test conditions f=455kKHz f=1MHz f=10.7MHz_ f=100MHz Voe=6V Vee=6v Voe=6V Voe=6V y Parameter te=—1mA le=—1mA le=e—1mA les—1mA ye [ge [oso Toso oa (ms) [be [og ote ta ye [=ge | (0.001Max 0.05Max (ms) _[=be | 0.005 [oro te 1.0 ye | ge Pa aT (ms)_[—be | 4.0Max 1.0Max 28 rs yoo | oe | 0.010 0.012 9.03 [ose (ns) [bee oot oe og COMMON EMITTER, 455kHz y PARAMETER REVERSE TRANSFER ADMITTANCE INPUT ADMITTANCE VS. EMITTER CURRENT VS. EMITTER CURRENT Aaa ve] we ot a > Hraa2st: [oF aw 2 fan25 ia BOS tna s5kHe Hit 4 6 {| i 0.05 H-asSkHe oe rs [TTT ev = Pott rr ot Tue 3 oot TTT Tt Pty Tf a ee. LIT IT | Z os | Vee BE oot E [ TPIT ty Te wT Se [TTT te [| 2 oof eet z ‘e005 | —| 1p bt tt [| Q ee | e Pt 7

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EMITTER CURRENT |e (mA) EMITTER CURRENT Ie (mA) COMMON EMITTER, 100MHz y PARAMETER REVERSE TRANSEEE ADMITTANCE INPUT ADMITTANCE VS. EMITTER CURRENT ‘VS. EMITTE! RENT ' Commoner] —T T1111 ws" eomonewren] T1111] a «fees, TTP Torr 2 (eae, TET Tt g t=100MH2 Pr iy 0 Het OOMHE ry a = | 2 3% 3.0 a er gee) ge | TTA i < 10 1 R wE to é E a 7 Se | | bef =| =F] | 2 | Aa s> os} FOP a 80 es e i sop A w ggf LPP rrr] z SoA ae ee * LIU Tg LIT EMITTER CURRENT Ie (mA) EMITTER CURRENT te (mA) FORWARD TRANSFER ADMITTANCE VS. EMITTER CURRENT OUTPUT ADMITTANCE VS. EMITTER CURRENT 8 1° COMMON EWITTER _ " counoss emmmerR| | [1] | | SC = Es fetooute HE} © soferoowie L-PPT TT = ot eet &§ 45. PET rte 2 ° HH g of Pa be Ly z |_| Beet | a a Se BCU ge ee) aeeecon eee 3 ost Ht ata 2 20 a 5 os eee : po a OC ey 4 a rf oe a & UT Fi . is EMITTER CURRENT |e (mA) EMITTER CURRENT Ie (mA)