BUZ31L SIEMENS | Alldatasheet

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Semiconductor Group 1 07/96 BUZ 31 L SIPMOS ® Power Transistor

  • N channel
  • Enhancement mode
  • Avalanche-rated
  • Logic Level Pin 1 Pin 2 Pin 3 G D S Type VDS ID R DS(on ) Package Ordering Code BUZ 31 L 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1322-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 °C ID 13.5 A Pulsed drain current TC = 25 °C IDpuls Avalanche current,limited by Tjmax IAR 13.5 Avalanche energy,periodic limited by Tjmax EAR 9 mJ Avalanche energy, single pulse ID = 13.5 A, VDD = 50 V, R GS = 25 Ω L = 1.65 mH, Tj = 25 °C EAS 200 Gate source voltage VGS ± 14 V Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation TC = 25 °C Ptot W Operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1.67 K/W Thermal resistance, chip to ambient R thJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 2 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 200 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS = 200 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 5 V, ID = 7 A R DS(on) - 0.16 0.2 Ω

Semiconductor Group 3 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 7 A gfs 5 12 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 1200 1600 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 200 300 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 100 150 Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 3 A R GS = 50 Ω td(on) - 25 40 ns Rise time VDD = 30 V, VGS = 5 V, ID = 3 A R GS = 50 Ω tr - 80 120 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 3 A R GS = 50 Ω td(off) - 210 270 Fall time VDD = 30 V, VGS = 5 V, ID = 3 A R GS = 50 Ω tf - 65 85

Semiconductor Group 4 07/96 BUZ 31 L Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 13.5 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 54 Inverse diode forward voltage VGS = 0 V, IF = 27 A VSD - 1.2 1.6 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 180 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Q rr - 1.2 - µC

Semiconductor Group 5 07/96 BUZ 31 L Power dissipation Ptot = ƒ(TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot Drain current ID = ƒ(TC ) parameter: VGS ≥ 5 V 0 20 40 60 80 100 120 °C 160 TC A ID Safe operating area ID = ƒ(VDS ) parameter: D = 0.01, TC = 25°C -1 10 0 10 1 10 2 10 A ID 10 0 10 1 10 2 V VDS R DS(on) V DS / I D DC 10 ms 1 ms 100 µs 10 µs tp = 3.1µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 07/96 BUZ 31 L Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs 0 2 4 6 8 V 11 VDS A ID VGS [V] a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l P tot = 75W l 10.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: VGS 0 4 8 12 16 20 A 26 ID 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 Ω 0.65 R DS (on) VGS [V] = a a 3.0 b b 3.5 c c 4.0 d d 4.5 e e 5.0 f f 5.5 g g 6.0 h h 6.5 i i 7.0 j j 8.0 k k 9.0 l l 10.0 Typ. transfer characteristics ID = f (VGS ) parameter: tp = 80 µs VDS ≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS A ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x RDS(on)max 0 2 4 6 8 10 12 14 16 A 20 ID S gfs

7 07/96Semiconductor Group BUZ 31 L Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 7 A, VGS = 5 V -60 -20 20 60 100 °C 160 Tj 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 Ω 0.65 R DS (on) typ 98% Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Typ. capacitances C = f (VDS ) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -1 10 0 10 1 10 2 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 07/96 BUZ 31 L Avalanche energy EAS = ƒ(Tj) parameter: ID = 13.5 A, VDD = 50 V R GS = 25 Ω , L = 1.65 mH 20 40 60 80 100 120 °C 160 Tj 100 120 140 160 180 mJ 220 E AS Typ. gate charge VGS = ƒ(Q Gate) parameter: ID puls = 21 A 0 20 40 60 80 100 120 nC 150 Q Gate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 180 185 190 195 200 205 210 215 220 225 230 V 240 V(BR)DSS

Semiconductor Group 9 07/96 BUZ 31 L Package Outlines TO-220 AB Dimension in mm