BUZ80 SIEMENS | Alldatasheet

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Semiconductor Group 1 09/96 BUZ 80 SIPMOS ® Power Transistor

  • N channel
  • Enhancement mode
  • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID R DS(on ) Package Ordering Code BUZ 80 800 V 3.1 A 4 Ω TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 °C ID 3.1 A Pulsed drain current TC = 25 °C IDpuls 12.5 Avalanche current,limited by Tjmax IAR 3.1 Avalanche energy,periodic limited by Tjmax EAR 8 mJ Avalanche energy, single pulse ID = 3.1 A, VDD = 50 V, R GS = 25 Ω L = 62.4 mH, Tj = 25 °C EAS 320 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 100 W Operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 1.25 K/W Thermal resistance, chip to ambient R thJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 2 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 800 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C IDSS 0.1 100 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 2 A R DS(on) - 3.5 4 Ω

Semiconductor Group 3 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 2 A gfs 1 3.6 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 900 1350 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 95 140 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 50 75 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A R GS = 50 Ω td(on) - 15 25 ns Rise time VDD = 30 V, VGS = 10 V, ID = 3 A R GS = 50 Ω tr - 65 85 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A R GS = 50 Ω td(off) - 200 270 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A R GS = 50 Ω tf - 65 85

Semiconductor Group 4 09/96 BUZ 80 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 3.1 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 12.5 Inverse diode forward voltage VGS = 0 V, IF = 6.2 A VSD - 1 1.3 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 370 - ns Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Q rr - 2.5 - µC

5 09/96Semiconductor Group BUZ 80 Drain current ID = ƒ(TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TC 0.0 0.4 0.8 1.2 1.6 2.0 2.4 A 3.2 ID Power dissipation Ptot = ƒ(TC ) 0 20 40 60 80 100 120 °C 160 TC W 110 Ptot Safe operating area ID = ƒ(VDS ) parameter: D = 0.01, TC = 25°C -1 10 0 10 1 10 2 10 A ID 10 0 10 1 10 2 10 3 V VDS R DS(on) V DS / I D DC 10 ms 1 ms 100 µs tp = 18.0µs Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 09/96 BUZ 80 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs , Tj = 25 °C 0 10 20 30 40 V 60 VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 A 7.0 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l P tot = 100W l 20.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: tp = 80 µs, Tj = 25 °C ID Ω R DS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 Typ. transfer characteristics ID = f (VGS ) parameter: tp = 80 µs VDS ≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x RDS(on)max ID 0.0 0.5 1.0 1.5 2.0 S 3.0 gfs

7 09/96Semiconductor Group BUZ 80 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 2 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Typ. capacitances C = f (VDS ) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -1 10 0 10 1 10 2 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 09/96 BUZ 80 Avalanche energy EAS = ƒ(Tj) parameter: ID = 3.1 A, VDD = 50 V R GS = 25 Ω , L = 62.4 mH 20 40 60 80 100 120 °C 160 Tj 120 160 200 240 280 mJ 340 E AS Typ. gate charge VGS = ƒ(Q Gate) parameter: ID puls = 5 A 0 10 20 30 40 50 nC 70 Q Gate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 720 740 760 780 800 820 840 860 880 900 920 V 960 V(BR)DSS

Semiconductor Group 9 09/96 BUZ 80 Package Outlines TO-220 AB Dimension in mm