BUZ311 SIEMENS | Alldatasheet

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Semiconductor Group 1 07/96 BUZ 311 SIPMOS ® Power Transistor

  • N channel
  • Enhancement mode Pin 1 Pin 2 Pin 3 G D S Type VDS ID R DS(on ) Package Ordering Code BUZ 311 1000 V 2.5 A 5 Ω TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V Drain-gate voltage R GS = 20 kΩ VDGR 1000 Continuous drain current TC = 25 °C ID 2.5 A Pulsed drain current TC = 25 °C IDpuls Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot W Thermal resistance, chip case R thJC ≤ 1.6 K/W Thermal resistance, chip to ambient R thJA 75 DIN humidity category, DIN 40 040 C IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 2 07/96 BUZ 311 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V(BR)DSS 1000 - - V Gate threshold voltage VGS =VDS, ID = 1 mA VGS(th) 2.1 3 4 Zero gate voltage drain current VDS = 1000 V, VGS = 0 V, Tj = 25 °C VDS = 1000 V, VGS = 0 V, Tj = 125 °C IDSS 100 1000 250 µA Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 100 nA Drain-Source on-resistance VGS = 10 V, ID = 1.5 A R DS(on) - 4.5 5 Ω

Semiconductor Group 3 07/96 BUZ 311 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS ≥ 2 * ID * RDS(on)max, ID = 1.5 A gfs 0.7 1.5 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C iss - 1600 2100 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C oss - 70 120 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz C rss - 30 55 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 2 A R GS = 50 Ω td(on) - 30 45 ns Rise time VDD = 30 V, VGS = 10 V, ID = 2 A R GS = 50 Ω tr - 40 60 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 2 A R GS = 50 Ω td(off) - 110 140 Fall time VDD = 30 V, VGS = 10 V, ID = 2 A R GS = 50 Ω tf - 60 80

Semiconductor Group 4 07/96 BUZ 311 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 2.5 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 10 Inverse diode forward voltage VGS = 0 V, IF = 6 A VSD - 1.05 1.3 V Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs trr - 2 - µs Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs Q rr - 15 - µC

5 07/96Semiconductor Group BUZ 311 Drain current ID = ƒ(TC ) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 A 2.6 ID Power dissipation Ptot = ƒ(TC ) 0 20 40 60 80 100 120 °C 160 TC W Ptot Safe operating area ID = ƒ(VDS ) parameter: D = 0.01, TC = 25°C -2 10 -1 10 0 10 1 10 2 10 A ID 10 0 10 1 10 2 10 3 V VDS R DS(on) V DS / I D DC 10 ms 1 ms 100 µs 10 µs 1 µs tp = 630.0ns Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 1 10 K/W ZthJC 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 6 07/96 BUZ 311 Typ. output characteristics ID = ƒ(VDS ) parameter: tp = 80 µs 0 10 20 30 40 50 V 65 VDS 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 A 6.0 ID VGS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l P tot = 78W l 20.0 Typ. drain-source on-resistance R DS (on) = ƒ(ID ) parameter: VGS ID Ω R DS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 Typ. transfer characteristics ID = f (VGS ) parameter: tp = 80 µs VDS ≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.5 1.0 1.5 2.0 A 3.0 ID Typ. forward transconductance gfs = f (ID ) parameter: tp = 80 µs, VDS ≥2 x ID x RDS(on)max ID 0.0 0.5 1.0 S 2.0 gfs

7 07/96Semiconductor Group BUZ 311 Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS , ID = 1 mA 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6 V GS(th) -60 -20 20 60 100 °C 160 Tj typ 98% Drain-source on-resistance R DS (on) = ƒ(Tj) parameter: ID = 1.5 A, VGS = 10 V -60 -20 20 60 100 °C 160 Tj Ω R DS (on) typ 98% Typ. capacitances C = f (VDS ) parameter:VGS = 0V, f = 1MHz 0 5 10 15 20 25 30 V 40 V DS -2 10 -1 10 0 10 1 10 nF C C rss C oss C iss Forward characteristics of reverse diode IF = ƒ(VSD ) parameter: Tj, tp = 80 µs -2 10 -1 10 0 10 1 10 A IF VSD Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Semiconductor Group 8 07/96 BUZ 311 Typ. gate charge VGS = ƒ(Q Gate) parameter: ID puls = 4 A 0 10 20 30 40 50 nC 65 Q Gate V VGS DS maxV0,8 DS maxV0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 Tj 900 920 940 960 980 1000 1020 1040 1060 1080 1100 1120 1140 1160 V 1200 V(BR)DSS

Semiconductor Group 9 07/96 BUZ 311 Package Outlines TO-218 AA Dimension in mm