BUZ60B SIEMENS | Alldatasheet
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88) D MM 8235605 OOL4L5b 4 MESIEG : 88D 14696 Dp AF T?3F-1/ BUZ 60 B \\ Main ratings N-Channel D Drain-source voltage Von = 400 Continuous drain current = =45A Drain-source on-resistance Rosen = 1,52 G Description SIPMOS, N-channel, enhancement mode s , Case Plastic package 1443 In accordance with DIN 41869, H or TO 220 AB in accordance with JEDEC. : The drain terminal is conductively connected to the mounting flange. _ Approx, weight 2 g Type Ordering code * & §BUZ608 | C67078-A1312-A4 > @ TS Gos 3 : a RS 83 3 . aster cS plu x) by * poet ~ ati i + ©) 92°02 = 1354 15,6:02 Dimensions in mm : Maximum ratings Description Symbols | Ratings —_| Units | Conditions Drain-source voltage Vos 400 v Drain-gate voltage Voor 400 v Fos = 20k2 Continuous drain current b 45 A To = 95°C Pulsed drain current Topus 18 A Te = 25°C Gate-source voltage Vos £20 v Max. power dissipation Po 75 w To = 25°C Operating and storage T temperature range Tata -55...+150 | °C DIN humidity category = - DIN 40040 IEC climatic category 85/150/56 DIN IEC 68-1 Thermal resistance Chip - case Ranso 1,67 Kw Chip - ambient Ronan S75 Kw 408 i Proforred 7 “9988 A-03
86) D MM 8235605 OOL4697 & MMSIEG | : SIEMENS AKTIENGESELLSCHAF - . BUZ 60 B asp 14697. 0 7° 39-// Electrical characteristics . (at 7; = 25°C unless otherwise specified) i Description Characteristics Conditions i min. | typ. | max. : i Static ratings i Drain-source Veenyoss Vv [Ms = 0 i breakdown voltage Tp = 0,25mA i Gate threshold voltage Vas (wy Vos = Vos t lp_=1mA Zero gate voltage Toss 250 [yA |] = 25°C drain current 1000 7, = 125°C Vog = 400V Veg = OV Gate-source leakage Tess Veg = 20V current Vog = OV Drain-source Veg = 10V on-resistance l= 25 : Dynamic ratings Forward 17 Vos = 25V transconductance b= 25 input capacitance [Ga [= [4820 [nF] vee = ov Output capacitance [Guz |= | 120__|160_[pF | Yos = 25 f= {MHz Reverse transfer Gus capacitance . Turn-on timo fa ee ee , Un = tren + [. [=| [oo || = 268 Trea Hi by [ee [= [110 [ao || fe = Bh (a= teen #9 ea a Reverse diode Continuous reverse Toa Te = 26°C drain current Pulsed reverse drain Toran : current . Diode forward on-voltage | Vay Vik =2x ba . Vos_= OV, Tj = 25°C Reverse recovery tne [|= | 1000 [= |na 7 - 25°C Reverse recovery yo |& = 1a charge ei = 100A/ps : Va = 100V
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