C67070-A2514-A67

BSM50GD120DN2E3226 SIEMENS | Alldatasheet

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Semiconductor Group 1 Jan-10-1997 BSM 50 GD120DN2E3226 IGBT Power Module

• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
• E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 1200V 50A ECONOPACK 2 C67070-A2514-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage R GE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 80 °C IC A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C ICpuls 100 Power dissipation per IGBT TC = 25 °C Ptot 350 W Chip temperature Tj + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case R thJC ≤ 0.35 K/W Diode thermal resistance, chip case R thJCD ≤ 0.7 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 2 Jan-10-1997 BSM 50 GD120DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage VGE = VCE, IC = 2 mA VGE(th) 4.5 5.5 6.5 V Collector-emitter saturation voltage VGE = 15 V, IC = 50 A, Tj = 25 °C VGE = 15 V, IC = 50 A, Tj = 125 °C VCE(sat) 3.1 2.5 3.7 Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C ICES 0.8 mA Gate-emitter leakage current VGE = 20 V, VCE = 0 V IGES - - 200 nA AC Characteristics Transconductance VCE = 20 V, IC = 50 A gfs 23 - - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 3300 - pF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 500 - Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 220 -

Semiconductor Group 3 Jan-10-1997 BSM 50 GD120DN2E3226 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 50 A R Gon = 22 Ω td(on) - 44 100 ns Rise time VCC = 600 V, VGE = 15 V, IC = 50 A R Gon = 22 Ω tr - 56 100 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 50 A R Goff = 22 Ω td(off) - 380 500 Fall time VCC = 600 V, VGE = -15 V, IC = 50 A R Goff = 22 Ω tf - 70 100 Free-Wheel Diode Diode forward voltage IF = 50 A, VGE = 0 V, Tj = 25 °C IF = 50 A, VGE = 0 V, Tj = 125 °C VF 1.8 2.3 2.8 V Reverse recovery time IF = 50 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C trr - 0.2 - µs Reverse recovery charge IF = 50 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C Q rr 2.8 µC

Semiconductor Group 4 Jan-10-1997 BSM 50 GD120DN2E3226 Power dissipation Ptot = ƒ(TC ) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 120 160 200 240 280 W 360 Ptot Safe operating area IC = ƒ(VCE ) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 3 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 29.0µs Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 Collector current IC = f (TC ) parameter: VGE ≥ 15 V, Tj ≤ 150 °C

Semiconductor Group 5 Jan-10-1997 BSM 50 GD120DN2E3226 Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C 0 1 2 3 V 5 VCE A IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp = 80 µs, VCE = 20 V 0 2 4 6 8 10 V 14 VGE A IC

Semiconductor Group 6 Jan-10-1997 BSM 50 GD120DN2E3226 Typ. gate charge VGE = ƒ(Q Gate) parameter: IC puls = 50 A 0 40 80 120 160 200 240 280 340 Q Gate V VGE

800 V600 V

Typ. capacitances C = f (VCE ) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE -1 10 0 10 1 10 2 10 nF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f(VCE ) , Tj = 150°C parameter: VGE = 15 V 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f(VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 0 200 400 600 800 1000 1200 V 1600 VCE ICsc/IC

Semiconductor Group 7 Jan-10-1997 BSM 50 GD120DN2E3226 Typ. switching time I = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 22 Ω 0 20 40 60 80 A 120 IC 1 10 2 10 3 10 ns t tdoff tr tf tdon Typ. switching time t = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 50 A 0 20 40 60 80 Ω 120 R G 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 22 Ω 0 20 40 60 80 A 120 IC mWs E Eon Eoff Typ. switching losses E = f (RG ) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 50 A 0 20 40 60 80 Ω 120 R G mWs E Eon Eoff

Semiconductor Group 8 Jan-10-1997 BSM 50 GD120DN2E3226 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj VF A IF Tj=25°C=125°CjT Transient thermal impedance Diode Zth JC = ƒ(tp) parameter: D = tp / T -4 10 -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 9 Jan-10-1997 BSM 50 GD120DN2E3226 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g