BUZ354 SIEMENS | Alldatasheet

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Technical content

88D D MM 8235605 0015038 4 mESIEG : SIEMENS AKTIENGESELLSCHAF 7°29 ~/3 Buz 384 Main ratings N-Channel D Drain-source voltage Yos = S00V Continuous drain current fp == 8A . Draln-source on-resistance Asien) = 0,82 G 5 Description SIPMOS, N-channel, enhancement mode s 4 Case Plastic package 15 in accordance with DIN 41 869 or a . TO 218 AA (TOP 3) In accordance with JEDEC. £ The drain terminal is conductively connected to the mounting flange. . Approx. weight 4,5 g : Type Ordering code . Ss SBUZ 354 (C67078-A3106-A2 £ 4,220.05 GC 12,52015 eo! G a —— I -o 4 FS to ene ‘S a ¥ he = LY ° SQ ala fA 46.085 pes Ke) 11,65:015 18.2e01s to o sige SG = car aa Dimensions in mm * Maximum ratings Description [ symbols | Ratings | Units | Conditions Drain-source voltage Vos 500 v Drain-gate voltage Voca 500 v Fes = 20kQ Continuous drain current iA 8 A To = 35°C Pulsed drain current Topus 32 A To = 25°C Gate-source voltage Vos, +20 v Max. power dissipation Po 125 w To = 25°C Operating and storage T \\ temperature range Tow -55...+150 | °C DIN humidity category — - DIN 40040 IEC climatic category 55/160/56 DIN IEC 68-1 Thermal resistance Chip - case Rinac <10 KW : Chip - ambient Pina S45 KW

748 Bipreterred Type ~

a8) DM 8235605 0015039 b MMSIEG =~ SIEMENS AKTIENGESELLSCHAF 7°39-/3 BUZ 354 i

Electrical characteristics

(at 7, = 25°C unless otherwise specified) . : Description Characteristics Conditions . min. | typ. | max. i Static ratings . Drain-source Veen) oss VMs = Ov breakdown voltage Ip = 0,25mA 1 Gate threshold voltage Vos any Vos = Vas : Ip =1mA t Zero gate voltage Toss 260 [pA | = 25°C drain current 1000 T, = 125°C Veg = 500V Vos = OV Gate-source leakage Tess 700 [nA | Vos = 20V current Vos = OV Drain-source 07 Ves = 10V on-resistance Ip = 55A Dynamic ratings Forward 27 Vog = 25V transconductance Ip = 55A input capacitance le. [= [38 [49 [nF | ves = ov Ouputcapastanco [duu | -[as0_ [400 pr | Yon = 25 Reverse transfer Cass f = IMHz capacitance ~ Turron tT a ee : (ten = fs en) + fe) [, | feo {120 | Ip = 28A Fara tet eo eS fort bacon, Ags = 502 (oa fon #2 a ee CC Reverse diode Continuous reverse Ton Te = 25°C drain current Pulsed reverse drain Toru current Diode forward on-voltage | Vag V|& =2x ba Vag_= OV, Tj = 25°C Raererecoey ime [& [= woo f= [re [5 = 28% Reverse recovery 12 wo |& = ta charge gig = 100A/us Va = 100V 1331 0-10 749

64D D = “@23Sb05 oo1so040 2 MESIEG : SIEMENS AKTIENGESELLSCHAF 7" 3473 Power dissipation Py = f(T) Typloa output aerachaahoe Ip = f (Vos) 7, = 25°C 140 18 CTT A yt Yt td Ww VTYV 27 EER CCCCEPEEECT) ibs A er Cer % “CUENTA 4 Oe eee COOUREEECCCTT) + “bo AMAZE 100 \\ hoov-AW/A_| | | T : POPPE N TEE) | eave ot cov | : so tHE NETTIE hsvaighAe tr ‘ COOP A ; eh -OCCO NC OA SESS LEE NT sy PAA CEN TTI S/he f 40 7A Se COCCCCPPC NT AES COCCCCCTN eS 20 ba) 4 COCCCEPC | or] LOE N | =oFE ETE TTT 0 50 100 °C 150 Yes sete era re = (bs) Nebr BSS

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1332 D-11

aap > m8 antenna eve . 235605 OOLSOWL 4 MMSIEG@— ENENS AKTIENGESELLSCHAF 7-39~/3 BUZ 354 Typical drain-source on-state apenas resistance: . paraitar: o = WVog = 10V : A pyesensscseeaszee iH FEEEEEEEE EEE : a BAMAABEABAANAAUNE MMOS Heitcstsicstcfosectst SnaaaT Haan ama Ss EEEEELEEEEEEET CEEEEH PCy" FEBeeeee ee Peeeree ee CeCCOeCaee ne = FEC PEELE zx Peery H BURRS AEUIIERIIERLIENE EouUSseeeauseeeeeneee FEE EEEEEEEH i HEE AR ABN)/AUIIBER ERPEEEE EERE HO) CEE paeaseeces ; lt rrr 4 . LeeLee er A hn FEL Ei cceerta i EEE rss RESELL sere ae SESE Ce pee eect ere DaAAAANANRTANENT Bee ice COOP C7] a eccoatacicsiastias ral pose AT SCCCCECEELH ‘ov PERE EEEEEEe Eee CCCPCEEEEE STE » EEE - C) 50 r : ; b 100 °C 150 —_— ej seeattoters BO a pulse tose =f (Ip) Gate threshold voltage Va Vog = 26V, 7) = 25°C parameter: Vog = Vas, bat ma? {TT Sen i TLL Sooo ; AURRREEEERUOGRE Meu vEEEEEEEEEEEEEEE EEE LL my = rrr -aeenn PFREET TTT rrr LECH Ee | PEERED SELL 30% HEHE ; PareCCeO | SEECEEEEPEREECES CoCr ssadauafiasfaantest , ] HEHE CSS Hee AHH aan Ha] Po sss . } Coed = fry rt Perey CYC TPES Pe eee HHH Hee saan EEEEEEECE PERSE ; Cocco BEEEEEEEEEEEEEEECE RH HACE seiner tetecaiitens Eee Cooeee ; Chee HHH PPC eer HOC ae PEELE EES Pee PTT] EEE EEE EEE HEH ACA CCCeee 1 EEECEEEEEEECEEEEEEH CoP EEECCEEECE Eee COC rr HHH tT /ECCCEEEE Cee eerr EEECEE CPE CECE CHECHE 7 ; ry 6 Or EEECEEEEE Eee 5 100°C 150 —Ih 1333 0-12 751

"gap Dm a235e0s coNsov2 Bb MSTIEG” SIEMENS AKTIENGESELLSCHAF 7 ~27-/3 BUZ 354 : | SS eS 0 . === Ooo HERS SCE Pe | HUANG 2 : = N 7 PRCER RRS) CONT se ee ee 10 0 0 10 20 3 Vv 40 0 50 100 °C 150 . —=Ns ——e Forward characteristic of reverse diode Faramatey, ty = 80s (spread) wv FREEREE EE EIRREE EEE EERE ° ae CASITA) 22480-ca HHT hm PO AAT I | oles ure SEEnoaEr a/c Sua) aMOBASESSEEE! HT COCO) TOIT TT) wo! HUTT TTT 0 os 10 WS 20 25 V 30 a ™ 1334 0-13

88D D MM 8235605 0015043 8 MMSIEG SIEMENS AKTIENGESELLSCHAF 7 °39-/3 ~— = BUZ 354 Teanslont thermal iinpedence Znue = £10 ‘ Se . Zep. . Se HEE FA : eet oe il * STI PIRSoos ttt 0-2 tp? i ail ail. Ht rhe al weet TE Hi ws 5 0% 85 10? 5 10? 5 17 5 10 os 10° _—., i ws yO or . a | er Fe SN a Ss | ce COS SS a 7 a yO a A Se ao oe Ae a 0 20 co) 60 80 100 «nC 120 = %a40 1335 0-14 788