C67040-A4207-A2

BUP314S SIEMENS | Alldatasheet

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Semiconductor Group 1 Feb-07-1997 BUP 314S Preliminary data IGBT

• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 314S 1200V 25A TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage R GE = 20 kΩ VCGR 1200 Gate-emitter voltage VGE ± 20 DC collector current TC = 25 °C TC = 90 °C IC A Pulsed collector current, tp = 1 ms TC = 25 °C TC = 90 °C ICpuls Avalanche energy, single pulse IC = 25 A, VCC = 50 V, R GE = 25 Ω L = 200 µH, Tj = 25 °C EAS mJ Power dissipation TC = 25 °C Ptot 300 W Chip or operating temperature Tj -55 ... + 150°C Storage temperature Tstg -55 ... + 150

Semiconductor Group 2 Feb-07-1997 BUP 314S Preliminary data Maximum Ratings Parameter Symbol Values Unit DIN humidity category, DIN 40 040 - E - IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56 Thermal Resistance Thermal resistance, chip case R thJC ≤ 0.42 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Collector-emitter breakdown voltage VGE = 0 V, IC = 0.3 mA, Tj = 25 °C V(BR)CES 1200 - - V Gate threshold voltage VGE = VCE, IC = 0.35 mA, Tj = 25 °C VGE(th) 4.5 5.5 6.5 Collector-emitter saturation voltage VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C VCE(sat) 6.6 4.6 5.5 7.6 Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C ICES - - 0.8 mA Gate-emitter leakage current VGE = 25 V, VCE = 0 V IGES - - 100 nA

Semiconductor Group 3 Feb-07-1997 BUP 314S Preliminary data AC Characteristics Transconductance VCE = 20 V, IC = 15 A gfs 8.5 12 - S Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C iss - 1950 2600 pF Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C oss - 180 270 Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz C rss - 120 180 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 15 A R Gon = 47 Ω td(on) - 65 100 ns Rise time VCC = 600 V, VGE = 15 V, IC = 15 A R Gon = 47 Ω tr - 60 90 Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 15 A R Goff = 47 Ω td(off) - 420 560 Fall time VCC = 600 V, VGE = -15 V, IC = 15 A R Goff = 47 Ω tf - 70 95

Semiconductor Group 4 Feb-07-1997 BUP 314S Preliminary data Power dissipation Ptot = ƒ(TC ) parameter: Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC 120 160 200 240 W 320 Ptot Collector current IC = ƒ(TC ) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 0 20 40 60 80 100 120 °C 160 TC A IC Safe operating area IC = ƒ(VCE ) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C -1 10 0 10 1 10 2 10 A IC 10 0 10 1 10 2 10 3 V VCE DC 10 ms 1 ms 100 µs tp = 18.0µs Transient thermal impedance IGBT Zth JC = ƒ(tp) parameter: D = tp / T -3 10 -2 10 -1 10 0 10 K/W ZthJC 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tp single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Semiconductor Group 5 Feb-07-1997 BUP 314S Preliminary data Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 25 °C 0 2 4 6 V 10 VCE A IC 17V 15V 13V 11V Typ. output characteristics IC = f (VCE ) parameter: tp = 80 µs, Tj = 125 °C 0 2 4 6 V 10 VCE A IC 17V 15V 13V 11V Typ. transfer characteristics IC = f (VGE ) parameter: tp=80µs,VCE =20 V 0 2 4 6 8 10 V 14 VGE A IC

Semiconductor Group 6 Feb-07-1997 BUP 314S Preliminary data Typ. switching time t = f (R G ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf Typ. switching time t = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 47Ω 0 5 10 15 20 25 30 A 40 IC 1 10 2 10 3 10 ns t tdon tr tdoff tf Typ. switching losses E = f (IC ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, R G = 48.9Ω 0 5 10 15 20 25 30 A 40 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 mWs 8.0 E Eon Eoff Typ. switching losses E = f (R G ) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A 0 20 40 60 80 100 120 140 160 Ω 200 R G 0.0 1.0 2.0 3.0 4.0 5.0 6.0 mWs 8.0 E Eon Eoff

Semiconductor Group 7 Feb-07-1997 BUP 314S Preliminary data Typ. capacitances C = f (VCE ) parameter: VGE = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VCE 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss Reverse biased safe operating area ICpuls = f (VCE ) , Tj = 150°C parameter: VGE = 15 V 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0.5 1.0 1.5 2.5 ICpuls/IC Short circuit safe operating area ICsc = f (VCE ) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH 0 200 400 600 800 1000 1200 V 1600 VCE ICsc/IC(90°C)