BCR523 SIEMENS | Alldatasheet

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Semiconductor Group 1 Nov-27-1996 BCR 523 NPN Silicon Digital Transistor

  • Switching circuit, inverter, interface circuit, driver circuit
  • Built in resistor (R 1=1kΩ ,R2=10kΩ ) Type Marking Ordering Code Pin Configuration Package BCR 523 XGs C62702-C2487 1=B 2=E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Input on Voltage Vi(on) 12 DC collector current IC 500 mA Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA 325 K/W Junction - soldering point R thJS 215 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

Semiconductor Group 2 Nov-27-1996 BCR 523 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CBO 50 - - Collector cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 0.72 mA DC current gain IC = 50 mA, VCE = 5 V hFE 70 - - Collector-emitter saturation voltage 1) IC = 50 mA, IB = 2.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.3 - 1 Input on Voltage IC = 10 mA, VCE = 0.3 V Vi(on) 0.4 - 1.4 Input resistor R 1 0.7 1 1.3 kΩ Resistor ratio R 1/R 2 0.09 0.1 0.11 - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT - 100 - MHz 1) Pulse test: t < 300µs; D < 2%

Semiconductor Group 3 Nov-27-1996 BCR 523 DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration) mA IC 0 10 1 10 2 10 3 10 hFE Collector-Emitter Saturation Voltage VCEsat = f(IC ), hFE = 20 V CEsat 0 10 1 10 2 10 3 10 mA IC Input on Voltage Vi(on) = f(IC ) VCE = 0.3V (common emitter configuration) V V i(on) -2 10 -1 10 0 10 1 10 2 10 3 10 mA IC Input off voltage Vi(off) = f(IC ) VCE = 5V (common emitter configuration) V i(off) -2 10 -1 10 0 10 1 10 mA IC

Semiconductor Group 4 Nov-27-1996 BCR 523 Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 250 300 mW 400 Ptot TS TA Permissible Pulse Load R thJS = f(tp) s tp -1 10 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax / PtotDC = f(tp) s tp 0 10 1 10 2 10 3 10 4 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5