C6082

2SC6082 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO V Collector-to-Emitter Voltage VCES V Collector-to-Emitter Voltage VCEO V Emitter-to-Base Voltage VEBO V Collector Current IC A Collector Current (Pulse) ICP PW≤10µs, duty cycle≤10% A Base Current IB A Collector Dissipation PC W Tc=25°C W Junction Temperature Tj 150 Storage Temperature Tstg --55 to +150 Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=40V, IE=0A µA Emitter Cutoff Current IEBO VEB=4V, IC=0A µA DC Current Gain hFE1 VCE=2V, IC=330mA 200 560 hFE2 VCE=2V, IC=10A Continued on next page. 72606 / 31506FA MS IM TB-00002089 2SC6082 NPN Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching Ap- plications SANYO Semiconductors DATA SHEET TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.

No. A0279-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Gain-Bandwidth Product fT VCE=10V, IC=2A 195 MHz Output Capacitance Cob VCB=10V, f=1MHz pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=7.5A, IB=375mA 200 400 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=7.5A, IB=375mA 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100µA, IE=0A V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0Ω V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100µA, IC=0A V Turn-ON Time ton See specified Test Circuit. ns Storage Time tstg See specified Test Circuit. 560 ns Fall Time tf See specified Test Circuit. ns Package Dimensions Switching Time Test Circuit unit : mm 7508-002 VR RB VCC=25V IC=20IB1= --20IB2=5A VBE= --5V 50Ω RL INPUT OUTPUT 100µF 470µF PW=20µs IB1 D.C.≤1% IB2 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.2 2.4 1.6 1.2 0.7 0.75 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A IC -- VCE 0.4 0.8 1.2 1.6 2.0 0.2 0.6 1.0 1.4 1.8 IT10574 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 IT10575 10mA 15mA 50mA IB=0mA 5mA 30mA 20mA 40mA 70mA 80mA 60mA 100mA 90mA 10mA 20mA 40mA 50mA 60mA IB=0mA 30mA 70mA 80mA 90mA From a top 300mA 250mA 200mA 180mA 150mA 120mA 100mA

No. A0279-3/4 Ta=75°C 25°C --25°C 100 1000 0.01 0.1 1.0 VCE=2V VCE=2.0V 1.0V 0.01 0.1 1.0 Ta=25°C 0.7V 0.5V 0.2V 0.01 0.1 1.0 7 10 0.1 1.0 fT -- IC VCE=10V f=1MHz 100 1000 100 1000 100 1000 Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Collector Current, IC -- A hFE -- IC DC Current Gain, hFE Base-to-Emitter Voltage, VBE -- V IC -- VBE Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A Cob -- VCB VCE(sat) -- IC VBE(sat) -- IC Collector-to-Base Voltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Ta=75°C 25°C --25°C VCE=2V 0.2 0.4 0.6 0.8 1.2 1.0 IT10576 IT10577 IT10578 IT10581 IT10580 IT10582 1.0 Ta= --25°C 25°C 75°C IT10583 0.01 0.1 1.0 0.01 0.1 1.0 0.1 0.01 IT10579 IC / IB=20 Ta=75°C --25°C 25°C IC / IB=20 0.01 0.1 1.0 0.1 0.01 IC / IB=50 Ta=75°C --25°C 25°C

No. A0279-4/4 PS 100 140 120 160 IT10561 0.5 1.0 2.0 1.5 2.5 Forward Bias A S O 0.01 0.1 1.0 1.0 0.1 100 ICP=20A IC=15A IT10584 100 120 140 160 IT10560 DC operation PT=500µs 100ms 10ms 1ms No heat sink Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W PC -- Ta Case Temperature, Tc -- °C Collector Dissipation, PC -- W PC -- Tc Tc=25°C Single pulse This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.