C5D25170H CREE | Alldatasheet

Document overview

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Technical content

Features

  • 1.7kV Schottky Rectifier
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies (SMPS)
  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • 1500V Solar Inverter Package TO-247-2 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1700 V VR DC Peak Reverse Voltage 1700 V IF Continuous Forward Current 33.6 25.6 A TC=25˚C TC=135˚C TC=150˚C Fig. 3 IFRM Repetitive Peak Forward Surge Current 99

57 A TC=25˚C, tP=10 ms, Half Sine Pulse

TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 117

88 A TC=25˚C, tP=10 ms, Half Sine Pulse

TC=110˚C, tP=10 ms, Half Sine Pulse Ptot Power Dissipation 384

167 W TC=25˚C

TC=110˚C Fig. 4 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TO-247 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Part Number Package Marking C5D25170H TO-247-2 C5D25170 PIN 1 PIN 2 CASE VRRM = 1700 V IF,(TC=135˚C) = 33.6 A Qc = 255 nC

C5D25170H Rev. 0, 12-2018

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.5 1.8

3.0 V IF = 25 A TJ=25°C

IF = 25 A TJ=175°C Fig. 1 IR Reverse Current 20 120 200 300 μA VR = 1700 V TJ=25°C VR = 1700 V TJ=175°C Fig. 2 QC Total Capacitive Charge 255 nC VR = 1700 V, IF = 25A di/dt = 200 A/μs TJ = 25°C Fig. 5 C Total Capacitance 1950 190 140 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz VR = 1700 V, TJ = 25˚C,f = 1 MHz Fig. 6 EC Capacitance Stored Energy 175 μJ VR = 1700 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note RθJC Thermal Resistance from Junction to Case 0.39 °C/W Fig. 8 Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

C5D25170H Rev. 0, 12-2018 Package Dimensions Package TO-247-2 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. 98W0002TO011 O Jan.09, 2018 TO-247 2LD Recommended Solder Pad Layout POS Inches Millimeters Min Max Min Max A 0.190 0.205 4.70 5.31 A1 0.087 0.102 2.21 2.59 A2 0.059 0.098 1.50 2.49 b 0.039 0.055 0.99 1.40 b1 0.065 0.095 1.65 2.41 c 0.015 0.035 0.38 0.89 D 0.819 0.845 20.80 21.46 D1 0.640 0.683 16.25 17.35 D2 0.112 0.124 2.86 3.16 E 0.620 0.640 15.49 16.26 E1 0.516 0.557 13.10 14.15 E2 0.135 0.201 3.43 5.10 E3 0.039 0.075 1.00 1.90 E4 0.487 0.529 12.38 13.43 e 0.428 BSC 10.88 BSC L 0.78 0.80 19.81 20.32 L1 - 0.177 - 4.50 ØP 0.138 0.144 3.51 3.66 Q 0.212 0.244 5.38 6.20 S 0.238 0.248 6.04 6.3 T 17.5° REF. W 3.5° REF. X 4° REF. Y 0 0.5 0 0.02 TO-247-2 .4all units are in inches PIN 1 PIN 2 CASE Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering Part Number Package Marking C5D25170H TO-247-2 C5D25170

C5D25170H Rev. 0, 12-2018 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes Related Links
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Diode Model VT RT Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT Note: TJ = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C