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1Publication date: June 2004 SJD00310BED 2SC5914 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor ■ Features
- High breakdown voltage: VCBO ≥ 1 500 V
- High-speed switching: tf < 200 ns
- Wide safe operation area ■ Absolute Maximum Ratings TC = 25°C ■ Electrical Characteristics TC = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Parameter Symbol Conditions Min Typ Max Unit Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 05 0 µA VCB = 1 500 V, IE = 01 m A Emitter-base cut-off current (Collector open) IEBO VEB = 7 V, IC = 05 0 µA Forward current transfer ratio hFE VCE = 5 V, IC = 6 A 5 10 Collector-emitter saturation voltage V CE(sat) IC = 6 A, IB = 1.5 A 2.5 V Base-emitter saturation voltage V BE(sat) IC = 6 A, IB = 1.5 A 1.5 V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz Storage time tstg IC = 6 A, Resistance loaded 2.7 µs Fall time tf IB1 = 1.5 A, IB2 = −3.0 A 0.2 µs Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V CBO 1 500 V Collector-emitter voltage (E-B short) V CES 1 500 V Collector-emitter voltage (Base open) V CEO 600 V Emitter-base voltage (Collector open) V EBO 7V Base current IB 5A Collector current IC 12 A Peak collector current * ICP 22 A Collector power dissipation PC 40 W Ta = 25°C3 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 15.5±0.5 3.0±0.3 (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 0.7±0.1 5˚ 5˚ 10.9±0.5 (10.0)(1.2) (2.0) Solder Dip3.3±0.3 5.5±0.3 (2.0) 26.5±0.5 (23.4) 22.0±0 5 18.6±0 5 (2.0) φ 3.2±0.1 (4.5) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 Note) *: Non-repetitive peak collector current Internal Connection B C E
2 SJD00310BED
PC Ta IC VCE IC VBE VCE(sat) IC hFE IC tf IB1(END) tstg IB1(END) Area of safe operation Area of safe operation (Horizontal operation) 0 50 100 150 Ambient temperature Ta (°C) Collector power dissipation PC (W) (1) (3) (2) (1) TC = Ta (2) With a 100 × 100 × 2 mm Al heat sink (3) Without heat sink 02468 1 0 IB = 2.0 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A 0.2 A 0 A 1.8 A Collector current IC (A) Collector-emitter voltage VCE (V) 0 0.4 0.8 1.2 VCE = 5 V Ta = 120°C −40°C 25°C Base-emitter voltage VBE (V) Collector current IC (A) 10 2 10 1 10 1 11 0 IC / IB = 4 Ta = 120°C −40°C 25°C Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (A) 10 1 102 10 1 11 0 Ta = 120°C −40°C 25°C VCE = 5 V Forward current transfer ratio hFE Collector current IC (A) Fall time tf (ns) Base current IB1(END) (A) 200 400 600 800 1 000 IC = 6.3 A L load 0.4 0.8 1.2 1.6 2.0 L load Storage time tstg (µs) Base current IB1(END) (A) Collector current IC (A) Collector-emitter voltage VCE (V) 10 1 10 2 10 3 102 11 0 1 0 2 103 ICP IC DC t = 100 µs 1 ms 10 ms Non repetitive pulse TC = 25°C VCEO max. 01 000500 1 500 2 000 Collector current IC (A) Collector-emitter voltage VCE (V) < 1 mA fH = 64 kHz, TC < 90°C ASO for a single pulse load caused by EHT flashover during horizontal operation.
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