2SA2099_08 SANYO | Alldatasheet

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Technical content

Features

  • Adoption of MBIT process.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching. Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -50)60 V Collector-to-Emitter Voltage VCEO (- -)50 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)10 A Collector Current (Pulse) ICP (- -)13 A Base Current IB (- -)2 A Collector Dissipation PC Tc=25°C2 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608FA TI IM / D2502 TS IM TA-3711 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications

No.7331-2/5 Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)10 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)10 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)1A 200 (560)700 Gain-Bandwidth Product f T VCE=(- -)5V, IC=(- -)1A (130)200 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (90)60 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)5A, IB=(- -)250mA (- -250)180 (- -500)360 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)5A, IB=(- -)250mA (- -)0.93 (- -)1.4 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)100μA, IE=0A (- -50)60 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)100μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (70)40 ns Storage Time t stg See specified Test Circuit. (650)1000 ns Fall Time t f See specified Test Circuit. (60)80 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7508-002 10.0 3.2 4.5 2.8 16.0 18.1 5.6 14.0 3.5 7.22.4 1.6 1.2 0.70.75 2.55 2.55 123 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML --10 --9 --8 --6 --7 --4 --5 --2 --3 --1 IC -- VCE --10mA --20mA --30mA --40mA --50mA --60mA --70mA --80mA --100mA IB=0mA IT04794 IC -- VCE IB=0mA 10mA 20mA 30mA 40mA IT04795 2SA2099 2SC5888 --90mA From top 100mA 90mA 80mA 70mA 60mA 50mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A VR RB VCC=20VVBE= --5V + +50Ω INPUT OUTPUT RL 100μF4 7 0 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2=3A (For PNP, the polarity is reversed.)

No.7331-3/5 Ta=75°C 25°C --25°C 1000 100 hFE -- IC 2SA2099 VCE= --2V IT04800 IC -- VBE 2SC5888 VCE=2V Ta=75 --25 IT04799 Ta=75 --25 2SA2099 VCE= --2V --12 --10 --8 --4 --2 --6 IC -- VBE IT04798 Ta=75°C 25°C --25°C 1000 100 0.01 325 100.173 25 7 3 25 71.0 hFE -- IC 2SC5888 VCE=2V IT04801 fT -- IC 100 IT04802 2SA2099 VCE= --5V fT -- IC 100 0.01 25 732 5 7 32 5 7 30.1 1.0 10 IT04803 2SC5888 VCE=5V Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE --5.0 --4.5 --4.0 --3.0 --3.5 --2.0 --2.5 --1.0 --1.5 --0.5 IC -- VCE --2mA --4mA --6mA --8mA --10mA --12mA --14mA --16mA --20mA IB=0mA IT04796 IC -- VCE IB=0mA 2mA 4mA 6mA 8mA 10mA 12mA IT04797 2SA2099 --18mA 2SC5888 From top 20mA 18mA 14mA 16mA 5.0 4.5 4.0 3.0 3.5 2.0 2.5 1.0 1.5 0.5 20 468 1 013579 Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A

No.7331-4/5 --1000 --100 --10 VCE(sat) -- IC IT04808 Ta=75 25°C --25°C 2SA2099 IC / IB=50 VBE(sat) -- IC3 --1000 Ta= --25°C 25°C 75°C 23 5 7 23 5 7 23 5 7 --1000 23 5 7 23 5 7 23 5 7 2SA2099 IC / IB=20 IT04810 --1000 --100 --10 VCE(sat) -- IC Ta=75 --25°C IT04806 2SA2099 IC / IB=20 25°C 1000 100 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 VCE(sat) -- IC Ta=75 --25 IT04807 2SC5888 IC / IB=20 25°C 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 1000 100 VCE(sat) -- IC IT04809 Ta=75 25°C --25 2SC5888 IC / IB=50 VBE(sat) -- IC Ta= --25°C 25°C 75°C 2SC5888 IC / IB=20 IT04811 Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Cob -- VCB1000 100 --0.1 3725 3 7 25 3 7 25--1.0 --10 --100 IT04804 2SA2099 f=1MHz Cob -- VCB1000 100 0.1 3725 3 7 25 3 7 251.0 10 100 IT04805 2SC5888 f=1MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF

No.7331-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice. 2006 0 40 80 100 140 120 160 PC -- Tc IT05373Case Temperature, Tc -- °C Collector Dissipation, PC -- W IT05371 A S O 1.0 0.1 0.01 23 5 70.1 1.0 23 5 7 10 23 5 7 1ms100ms DC operation 100 μs μs 500 μs10ms ICP=13A IC=10A ≤10μs Tc=25°C Single Pulse (For PNP, minus sign is omitted.) 0 2.5 1.5 2.0 1.0 0.5 2006 0 40 80 100 140 120 160 PC -- Ta IT05372 No heat sink Collector Dissipation, PC -- W Ambient Temperature, Ta -- °CCollector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A