2SC5763 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • High breakdown voltage.
  • High reliability.
  • High-speed switching.
  • Wide ASO.
  • Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO 700 V Collector-to-Emitter Voltage V CEO 400 V Emitter-to-Base Voltage V EBO 8V Collector Current I C 7A Collector Current (Pulse) I CP PW ≤300µs, Duty cycle≤10% 14 A Collector Dissipation P C 1.75 W Tc=25°C5 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB =400V, IE=0 10 µA Emitter Cutoff Current I EBO VEB =5V, IC =0 10 µA Continued on next page. * : The hFE 1 of the 2SC5763 is classified as follows. Rank M N hFE 1 20 to 40 30 to 50 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SC5763 Package Dimensions unit : mm 2010C [2SC5763] D0301 TS IM TA-3501 / 71801 TS IM TA-3234 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220 10.2 5.13.618.0 5.6 2.7 6.315.1 1.2 14.0 0.8 1.34.5 0.4 2.552.55 2.7 123

No.6989-2/4 VR R B VCC =200VVBE = --5V + + 50Ω INPUT OUTPUT R L 100µF 470 µF PW=20 µs IB1 D.C.≤1% IB2 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit hFE 1V CE =5V, IC =0.8A 20* 50* DC Current Gain h FE 2V CE =5V, IC =4A 10 hFE 3V CE =5V, IC =1mA 10 Collectoe-to-Emitter Saturation Voltage VCE (sat) I C =4A, IB=0.8A 0.8 V Base-to-Emitter Saturation Voltage V BE (sat) I C =4A, IB=0.8A 1.5 V Gain-Bandwidth Product f T VCE =10V, IC =0.8A 17 MHz Output Capacitance Cob V CB =10V, f=1MHz 80 pF Collector-to-Base Breakdown Voltage V (BR)CBO IC =1mA, IE=0 700 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC =5mA, RBE =∞ 400 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=1mA, IC =0 8 V Turn-On Time t on IC =5A, IB1=1A, IB2=--2A, RL=40Ω , VCC =200V 0.5 µs Storage Time t stg IC =5A, IB1=1A, IB2=--2A, RL=40Ω , VCC =200V 2.5 µs Fall Time t f IC =5A, IB1=1A, IB2=--2A, RL=40Ω , VCC =200V 0.25 µs Switching Time Test Circuit 100 1.0 0.1 23 7 5 1.00.01 23 7 52 3 7 5 10 V CE =5V IT03053 IT03054 hFE -- IC IT03055 2468 1 0 --40 Ta=120 --40°C 25°C Ta=120°C V CE =5V IB =0 100mA 200mA 300mA 400mA 500mA 600mA700mA800mA900mA 1000mA 1.0 0.1 0.01 0.1 23 7 5 1.00.01 23 7 52 3 7 5 10 VCE (sat) -- IC IT03056 --40°C 25°C Ta=120 IC / IB =5 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE Collector-to-Emitter Saturation V oltage, VCE (sat) -- V

No.6989-3/4 PC -- Tc IT03062 Collector Current, IC -- A SW Time -- IC Switching Time, SW Time -- µs IT03058 Forward Bias A S O IT03077 Reverse Bias A S O IT03060 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.75 2.0 0 20 40 60 80 100 120 140 160 PC -- Ta IT03061 1.0 0.1 0.1 1.00.01 23 7 52 3 7 52 3 7 5 10 VBE (sat) -- IC IT03057 1.0 0.1 0.1 23 7 5 1.0 23 7 5 10 120°C 25°C Ta= --40°C IC / IB =5 V CC =200V IC / IB1 =5, IB2 / IB1 =2.5 R load tstg tf 1.0 0.1 1.0 23 5 7 23 5 710 100 23 5 7 1000 Tc=25°C IB2 = --1.2A L=500 µH, Single pulse ICP Base-to-Emitter Saturation V oltage, VBE (sat) -- V Collector Current, IC -- A Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Case Temperature, Tc -- °C No heat sink 1.0 23 5 7 10 23 5 7 23 5 7100 1000 1.0 0.1 0.01 ≤50µsICP =14A IC =7A 10ms 1ms 100 µsDC operation S / B Limited Tc=25°C Single pulse 0 20 40 60 80 100 120 140 160

No.6989-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2001. Specifications and information herein are subject to change without notice. PS