2SA2039_12 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Adoption of FBET and MBIT processes • Large current capacitance
  • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Specifi cations ( ): 2SA2039 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -50)100 V Collector-to-Emitter Voltage V CES (- -50)100 V Collector-to-Emitter Voltage V CEO (- -)50 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)5 A Collector Current (Pulse) I CP (- -)7.5 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003

82912 TKIM/42512EA TKIM/62405EA MSIM TB-00001404/30101 TSIM TA-3232

PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching

Applications

http://www.sanyosemi.com/en/network/ 6.5 5.0 2.3 0.5 0.85 0.7 1.2 0.6 0.5 2.3 2.3 7.07.5 1.6 0.8 5.5 1.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 6.5 5.0 2.3 0.5 0.85 0.6 0.5 1.2 1.2 2.3 2.3 7.02.5 5.5 1.5 0.8 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-F A 2SA2039-E 2SC5706-E 2SC5706-H 2SA2039-TL-E 2SC5706-TL-E 2SC5706-TL-H 2,4 (For PNP , the polarity is reversed.) TL Product & Package Information

  • Package : TP • Package : TP-FA
  • JEITA, JEDEC : SC-64, TO-251 • JEITA, JEDEC : SC-63, TO-252
  • Minimum Packing Quantity : 500 pcs./bag • Minimum Packing Quantity : 700 pcs./reel Marking (TP , TP-FA) Packing Type (TP-FA) : TL Electrical Connection A2039 C5706 LOT No.LOT No.

No.6912-2/10 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I B (- -)1.2 A Collector Dissipation P C 0.8 W Tc=25°C1 5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)40V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain h FE VCE=(- -)2V, IC=(- -)500mA 200 560 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)500mA (360)400 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (24)15 pF Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage V BE(sat) V CE=(- -)2V, IB=(- -)100mA (- -)0.89 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CES IC=(- -)100μA, RBE=0Ω (- -50)100 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (30)35 ns Storage Time t stg (230)300 ns Fall Time t f (15)20 ns Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA2039-E TP 500pcs./bag Pb Free 2SC5706-E TP 500pcs./bag 2SC5706-H TP 500pcs./bag Pb Free & Halogen Free 2SA2039-TL-E TP-FA 700pcs./reel Pb Free 2SC5706-TL-E TP-FA 700pcs./reel 2SC5706-TL-H TP-FA 700pcs./reel Pb Free & Halogen Free VR10 25Ω VCC=25VVBE= - -5V IC=10IB1= - -10IB2=1A + +50Ω INPUT OUTPUT RB 100μF 470 μF PW=20μs IB1 IB2D.C.b1% For PNP, the polarity is reversed.

No.6912-3/10 --10000 --1000 --100 --10 VCE(sat) -- IC Collector Current, IC -- A Ta=75 --25°C IT02976 2SA2039 IC / IB=20 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 100 1000 VCE(sat) -- IC Collector Current, IC -- A IT02978 Ta=75 25°C --25 2SC5706 IC / IB=20 Ta=75°C 25°C --25°C 1000 100 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE 2SA2039 VCE= --2V IT00156 1000 100 0.01 325 100.173 25 7 3 25 71.0 hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Ta=75°C --25°C 25°C 2SC5706 VCE=2V IT00157 25°C Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IT02975 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A 2SC5706 VCE=2V --25 IT00155 Ta=75 --25 2SA2039 VCE= --2V --4.0 --3.5 --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IT00154 --1 --2 --3 --4 --5 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --10mA --5mA--20mA --30mA --60mA --80mA --100mA IB=0mA IT02974 --40mA --50mA --70mA 5mA 20mA 10mA IB=0mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA 100mA 2SA2039 2SC5706 --90mA Ta=75

No.6912-4/10 fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A 100 1000 --0.01 25 7 7 73 --0.1 25 32 5 3--1.0 --1057 IT00166 2SA2039 VCE= --10V fT -- IC Gain-Bandwidth Product, fT -- MHz Collector Current, IC -- A 100 1000 0.01 25 7 7 73 0.1 25 32 5 31.0 105 IT00167 2SC5706 VCE=10V Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V 100 0.1 23 3 77 3 7755 1.0 2 10 25 1005 IT00165 2SC5706 f=1MHz Cob -- VCB Output Capacitance, Cob -- pF Collector-to-Base V oltage, VCB -- V 100 --0.1 23 7 5752 3 7 52 3 7 5--1.0 --10 --100 IT00164 2SA2039 f=1MHz 0.01 0.1 23 5 7 23 5 7 23 5 7 1.0 10 10000 1000 100 VCE(sat) -- IC Collector Current, IC -- A IT02979 Ta=75 --25°C 2SC5706 IC / IB=50 1.0 0.1 0.01 0.1 1.0 10 Ta= --25°C 25°C 75°C 23 5 7 23 5 7 23 5 7 2SC5706 IC / IB=50 VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V IT00163 VBE(sat) -- IC Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A --10 --1.0 --0.1 Ta= --25°C 25°C75°C 23 5 7 23 5 7 23 5 7 2SA2039 IC / IB=50 IT00162 --10000 --1000 --100 --10 VCE(sat) -- IC Collector Current, IC -- A Ta=75 25°C --25°C IT02977 2SA2039 IC / IB=50 25°C Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV

No.6912-5/10 2006 0 40 80 100 140 120 160 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 A S O Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V 0.01 0.1 1.0 1.00.1 10 100 25 3725 3725 37 ICP=7.5A 100ms 10ms 1ms IC=5A IT02980 2SA2039 / 2SC5706 Tc=25°C Single pulse For PNP, the minus sign(--)is omitted Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C 2006 0 40 80 100 140 120 160 PC -- Ta IT02981 2SA2039 / 2SC5706 Collector Dissipation, PC -- W Case Temperature, Tc -- °C PC -- Tc IT02982 DC operation (Tc=25 °C) DC operation (Ta=25 °C) 500 μs 100 μs No heat sink 2SA2039 / 2SC5706

No.6912-6/10 Taping Specifi cation 2SA2039-TL-E, 2SC5706-TL-E, 2SC5706-TL-H

No.6912-7/10 Outline Drawing Land Pattern Example 2SA2039-TL-E, 2SC5706-TL-E, 2SC5706-TL-H Mass (g) Unit 0.282 * For reference mm Unit: mm 7.0 1.5 2.3 2.02.5 2.3 7.0

No.6912-8/10 Bag Packing Specifi cation 2SA2039-E, 2SC5706-E, 2SC5706-H

No.6912-9/10 Outline Drawing 2SA2039-E, 2SC5706-E, 2SC5706-H Mass (g) Unit 0.315 * For reference mm

No.6912-10/10PS This catalog provides information as of August, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.