C565-30 ROITHNER | Alldatasheet
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[Yellow Green] 1) Commodity Type and Physical Characteristics. 1. Material GaP 2. Electrode Top Side P (anode) side : Au Alloy/ Pad Bottom Side N (cathode) side : Au Alloy 3. Electrode Pattern Fig.1 4. Chip Size Fig.2 5. Chip Thickness Fig.2 6. Emission Area Fig.2 2) Electro-Optical Characteristics [Ta=25°C] Parameters Symbol Condition Min . Typ. Max . Unit Forward Voltage Vf If=20mA 2.2 2.4 V Reverse Current Ir Vr=5V 10 u A Brightness Iv If=20mA 12 16 mcd Power Intensity Po If=20mA 0.06 0.12 mW Peak Wavelength lP If=20mA 560 565 570 nm Spectral Radiation Bandwidth Dl If=20mA 25 nm ‡ Die shall be mounted on TO=18 gold header without resin coated. [Unit: um] Fig.1 Electrode Pattern Fig.2 Chip size and Emission Area