2SC5609 PANASONIC | Alldatasheet
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Technical content
Silicon PNP epitaxial planer type For general amplification Complementary to 2SA2021 I Features
- High foward current transfer ratio hFE
- SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing I Absolute Maximum Ratings Ta = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 60 V Collector to emitter voltage V CEO 50 V Emitter to base voltage V EBO 7V Peak collector current I CP 200 mA Collector current I C 100 mA Collector power dissipation P C 100 mW Junction temperature T j 125 °C Storage temperature T stg −55 to +125 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 10 V, IB = 0 100 µA Collector to base voltage V CBO IC = 10 µA, IE = 06 0 V Collector to emitter voltage V CEO IC = 2 mA, IB = 05 0V Emitter to base voltage V EBO IE = 10 µA, IC = 07 V Forward current transfer ratio h FE1 VCE = 10 V, IC = 2 mA 180 390 hFE2 VCE = 2 V, IC = 100 mA 90 Collector to emitter saturation voltage V CE(sat) IC = 100 mA, IB = 10 mA 0.1 0.3 V Collector output capacitance C ob VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF Transition frequency f T VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz I Electrical Characteristics Ta = 25°C ± 3°C Marking Symbol: 3F 1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin) 1.20±0.050.52±0.03 0 to 0.01 0.15 min. 0.80±0.050.15 min. 0.33 (0.40)(0.40) 0.80±0.05 1.20±0.05 +0.05 –0.02 0.10+0.05 –0.02 0.23+0.05 –0.02