2SC5583 PANASONIC | Alldatasheet
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Technical content
Silicon NPN triple diffusion mesa type For horizontal deflection output I Features
- High breakdown voltage, and high reliability through the use of a glass passivation layer
- High-speed switching
- Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 1 500 V Collector to emitter voltage V CES 1 500 V VCEO 600 V Emitter to base voltage V EBO 7V Peak collector current I CP 30 A Collector current I C 17 A Base current I B 8 A Collector power TC = 25°CP C 150 W dissipation Ta = 25°C3 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 1 000 V, IE = 05 0 µA VCB = 1 500 V, IE = 01 m A Emitter cutoff current I EBO VEB = 7 V, IC = 05 0 µA Forward current transfer ratio h FE VCE = 5 V, IC = 8.5 A 6 12 Collector to emitter saturation voltage V CE(sat) IC = 8.5 A, IB = 2.13 A 3 V Base to emitter saturation voltage V BE(sat) IC = 8.5 A, IB = 2.13 A 1.5 V Transition frequency f T VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz Storage time t stg IC = 8.5 A, Resistance loaded 2.7 µs Fall time t f IB1 = 2.13 A, IB2 = −4.25 A 0.2 µs 20.0±0.5 2.0±0.3 3.0±0.3 1.0±0.2 5.45±0.3 10.9±0.5 123 26.0±0.5 (10.0)(2.5) Solder Dip (6.0) 20.0±0.5 5.0±0.3 φ 3.3±0.2 (1.5) 2.7±0.3 0.6±0.2 (3.0) (3.0) (2.0) 1: Base 2: Collector 3: Emitter Internal Connection B C E Marking Symbol: C5583