2SC5552 PANASONIC | Alldatasheet
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Technical content
Silicon NPN triple diffusion mesa type For horizontal deflection output I Features
- High breakdown voltage, and high reliability through the use of a glass passivation layer
- High-speed switching
- Wide area of safe operation (ASO) I Absolute Maximum Ratings TC = 25°C Unit: mm Parameter Symbol Rating Unit Collector to base voltage V CBO 1 700 V Collector to emitter voltage V CES 1 700 V VCEO 600 V Emitter to base voltage V EBO 7V Peak collector current I CP 30 A Collector current I C 16 A Base current I B 8 A Collector power TC = 25°CP C 65 W dissipation Ta = 25°C 3.5 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C I Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 1 000 V, IE = 05 0 µA VCB = 1 700 V, IE = 01 m A Emitter cutoff current I EBO VEB = 7 V, IC = 05 0 µA Forward current transfer ratio h FE VCE = 5 V, IC = 8 A 6 12 Collector to emitter saturation voltage V CE(sat) IC = 8 A, IB = 2 A 3 V Base to emitter saturation voltage V BE(sat) IC = 8 A, IB = 2 A 1.5 V Transition frequency f T VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz Storage time t stg IC = 8 A, Resistance loaded 3.0 µs Fall time t f IB1 = 2 A, IB2 = −4 A 0.2 µs 15.5±0.5 3.0±0.3 (4.0) 2.0±0.2 1.1±0.1 5.45±0.3 0.7±0.1 5° 5° 10.9±0.5 (10.0)(1.2) (2.0) Solder Dip3.3±0.3 5.5±0.3 (2.0) 26.5±0.5 (23.4) 22.0±0.5 18.6±0.5 (2.0) φ 3.2±0.1 (4.5) 1: Base 2: Collector 3: Emitter Internal Connection B C E Marking Symbol: C5552